HAF1001-90 RENESAS [Renesas Technology Corp], HAF1001-90 Datasheet

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HAF1001-90

Manufacturer Part Number
HAF1001-90
Description
Silicon P Channel MOS FET Series Power Switching
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
HAF1001
Silicon P Channel MOS FET Series
Power Switching
Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
Outline
Rev.4.00 Apr 27, 2006 page 1 of 7
Logic level operation (–4 to –6 V Gate drive)
High endurance capability against to the short circuit
Built-in the over temperature shut-down circuit
Latch type shut-down operation (Need 0 voltage recovery)
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
1
2
3
4
G
Tempe-
rature
Sensing
Circuit
Gate resistor
Latch
Circuit
Gate
Shut-
down
Circuit
D
S
(Previous: ADE-208-583A)
REJ03G1132-0400
1. Gate
2. Drain
3. Source
4. Drain
Apr 27, 2006
Rev.4.00

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HAF1001-90 Summary of contents

Page 1

... HAF1001 Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. ...

Page 2

... HAF1001 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value Typical Operation Characteristics Item Input voltage ...

Page 3

... HAF1001 Electrical Characteristics Item Drain current Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Input current (shut down) Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Output capacitance ...

Page 4

... HAF1001 Main Characteristics Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics –50 –10 V –40 –30 –20 – –2 –4 Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage –2.0 –1.6 –1.2 –0.8 –0 –2 – ...

Page 5

... HAF1001 Static Drain to Source on State Resistance vs. Temperature 0. – 0.12 0.08 –10 V 0.04 0 – Case Temperature Body-Drain Diode Reverse Recovery Time 500 200 100 µ 25° –0.1 –0.2 –0.5 –1 –2 Reverse Drain Current Reverse Drain Current vs. ...

Page 6

... HAF1001 Gate to Source Voltage vs. Shutdown Time of Load-Short Test –12 – –8 –6 –4 –2 0 0.0001 0.001 0.01 Shutdown Time of Load-Short Test PW ( 0.5 0.3 0.1 0.03 0.01 10 µ Switching Time Test Circuit Vin Monitor D.U.T. Vin 50 Ω –5 V Rev.4.00 Apr 27, 2006 page –36 V –24 V – ...

Page 7

... JEITA Package Code RENESAS Code SC-46 PRSS0004AC-A 2.54 ± 0.5 Ordering Information Part Name HAF1001-90 Max: 50 pcs/sack Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Apr 27, 2006 page Package Name MASS[Typ.] TO-220AB / TO-220ABV 1 ...

Page 8

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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