PHT6N06 PHILIPS [NXP Semiconductors], PHT6N06 Datasheet - Page 6

• Manufacturer Part Number: PHT6N06
• Description: TrenchMOS transistor Standard level FET
• Manufacturer: PHILIPS [NXP Semiconductors]

Philips Semiconductors
September 1997
TrenchMOS
Standard level FET
Fig.13. Typical turn-on gate-charge characteristics.
VGS/V
IF/A
V
I
F
GS
10
12
10
= f(V
8
6
4
2
0
8
6
4
2
0
0
= f(Q
0
Fig.14. Typical reverse diode current.
SDS
G
0.2
); conditions: I
); conditions: V
1
0.4
2
Tj/C =
transistor
VDS = 14V
0.6
VSDS/V
3
150
QG/nC
D
GS
= 5 A; parameter V
0.8
= 0 V; parameter T
4
25
1
5
VDS = 44V
1.2
6
DS
1.4
j
7
6
VGS
0
VGS
0
Fig.15. Normalised avalanche energy rating.
120
110
100
90
80
70
60
50
40
30
20
10
0
Fig.16. Avalanche energy test circuit.
W
20
WDSS%
W
DSS
Fig.17. Switching test circuit.
DSS
% = f(T
RGS
40
0.5 LI
RG
60
sp
); conditions: I
D
2
BV
Tmb / C
80
DSS
L
RD
VDS
100
BV
T.U.T.
VDS
T.U.T.
Product specification
DSS
D
120
= 1.9 A
shunt
R 01
PHT6N06T
V
DD
-
+
-
+
140
Rev 1.000
-ID/100
VDD
VDD