bfg540w-xr NXP Semiconductors, bfg540w-xr Datasheet - Page 7

• Manufacturer Part Number: bfg540w-xr
• Description: Npn 9 Ghz Wideband Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2000 May 23
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
V
R
Fig.11 Intermodulation distortion as a function of
V
Fig.13 Minimum noise figure as a function of
o
CE
L
(dB)
(dB)
d im
= 500 mV; f
= 75 .
F
= 8 V.
20
30
40
50
60
70
4
3
2
0
10
1
1
collector current; typical values.
collector current; typical values.
f = 2000 MHz
1000 MHz
(p + q
900 MHz
500 MHz
20
r)
= 793.25 MHz; V
30
10
40
CE
= 8 V; T
I
C
(mA)
50
amb
I C (mA)
MEA973
MLC049
= 25 C;
10
60
2
7
handbook, halfpage
handbook, halfpage
V
R
Fig.12 Second order intermodulation distortion as
Fig.14 Associated available gain as a function of
V
o
L
CE
F min
(dB)
(dB)
= 275 mV; f
= 75 .
d 2
20
30
40
50
60
70
= 8 V.
5
4
3
2
1
0
10
1
a function of collector current; typical
values.
collector current; typical values.
BFG540W/X; BFG540W/XR
2000 MHz
1000 MHz
900 MHz
500 MHz
(p + q)
20
= 810 MHz; V
30
CE
10
G ass
F min
= 8 V; T
40
I C (mA)
Product specification
amb
f = 900 MHz
BFG540W
50
= 25 C;
1000 MHz
2000 MHz
I C (mA)
MRA760
MEA972
60
10
20
15
10
0
5
2
G ass
(dB)
5