ATP602_12 SANYO [Sanyo Semicon Device], ATP602_12 Datasheet - Page 2

• Manufacturer Part Number: ATP602_12
• Description: General-Purpose Switching Device Applications
• Manufacturer: SANYO [Sanyo Semicon Device]

Electrical Characteristics at Ta=25°C
Fig.1 Avalanche Resistance Test Circuit
Ordering Information
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
ATP602-TL-H
10V
0V
Device
Parameter
50Ω
≥50Ω
RG
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
ATP602
Symbol
Package
ATPAK
L
I D =10mA, V GS =0V
V DS =480V, V GS =0V
V GS =±30V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =2.5A
I D =2.5A, V GS =10V
V DS =30V, f=1MHz
See Fig.2
V DS =200V, V GS =10V, I D =5A
I S =5A, V GS =0V
V DD
ATP602
Conditions
Fig.2 Switching Time Test Circuit
3,000pcs./reel
Shipping
10V
0V
P.G
PW=10μs
D.C.≤0.5%
V IN
V IN
R GS =50Ω
min
G
600
Pb Free and Halogen Free
1.5
3
V DD =200V
D
Ratings
typ
S
memo
R L =80Ω
I D =2.5A
14.2
37.4
36.2
20.4
13.6
350
2.9
2.1
3.4
7.2
0.9
68
15
ATP602
max
V OUT
±100
100
2.7
1.2
No. A1543-2/7
5
Unit
μA
nA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
Ω
V
V
V