AOT400L AOSMD [Alpha & Omega Semiconductors], AOT400L Datasheet - Page 2

• Manufacturer Part Number: AOT400L
• Description: N-Channel Enhancement Mode Field Effect Transistor
• Manufacturer: AOSMD [Alpha & Omega Semiconductors]

Alpha & Omega Semiconductor, Ltd.
AOT400
Rev3: August 2005
Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
V
I
R
V
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
t
t
t
t
t
Q
A: The value of R
B. The power dissipation P
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
G. The maximum current rating is limited by bond-wires.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
DSS
GSS
D(ON)
S
D(on)
r
D(off)
f
rr
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
(10V)
DSS
g
FS
θJA
is the sum of the thermal impedence from junction to case R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
θJA
is measured with the device in a still air environment with T
Forward Transconductance
D
is based on T
Parameter
J(MAX)
J
=25°C unless otherwise noted)
J(MAX)
=175°C.
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
Conditions
I
V
V
V
V
V
V
V
V
I
V
V
V
V
R
I
J(MAX)
D
S
F
F
DS
DS
DS
GS
GS
GS
DS
DS
GS
GS
GS
GS
=1A, V
GEN
=30A, dI/dt=100A/µs
=30A, dI/dt=100A/µs
=10mA, V
=75V, V
=0V, V
=V
=5V, I
=15V, I
=10V, V
=10V, I
=6V, I
=0V, V
=0V, V
=10V, V
=10V, V
=175°C.
=3Ω
GS
θJC
, I
GS
and case to ambient.
D
D
GS
DS
DS
D
=30A
=30A
=0V
D
D
GS
GS
=250µA
DS
DS
DS
=70A
=30A
=±20V
=25V, f=1MHz
=0V, f=1MHz
A
=0V
=5V
=30V, I
=30V, R
=25°C.
=0V
D
=30A
L
T
=1Ω,
T
J
=125°C
J
=55°C
Min
200
75
2
8390
1060
Typ
106
200
450
167
180
2.8
4.2
7.2
4.6
0.7
1.2
40
45
29
41
90
34
64
10500
Max
100
110
210
4.7
8.2
5.2
1.5
80
1
5
4
1
Units
mΩ
mΩ
nC
nC
nC
nC
µA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
A
S
V
A