v54c365324v ETC-unknow, v54c365324v Datasheet

no-image

v54c365324v

Manufacturer Part Number
v54c365324v
Description
200/183/166/143 Volt Ultra High Performance Sdram Banks 512kbit
Manufacturer
ETC-unknow
Datasheet
M O S E L V I T E L I C
Features
V54C365324V Rev. 1.2 August 2001
V54C365324V
Clock Frequency (t
CAS Latency
Cycle Time (t
Access Time (t
JEDEC Standard 3.3V Power Supply
The V54C365324V is ideally suited for high
performance graphics peripheral applications
Single Pulsed RAS Interface
Programmable CAS Latency: 2, 3
All Inputs are sampled at the positive going edge
of clock
Programmable Wrap Sequence: Sequential or
Interleave
Programmable Burst Length: 1, 2, 4, 8 and Full
Page for Sequential and 1, 2, 4, 8 for Interleave
DQM 0-3 for Byte Masking
Auto & Self Refresh
2K Refresh Cycles/32 ms
Burst Read with Single Write Operation
CK
AC
)
)
CK
)
V54C365324V
200/183/166/143 MHz 3.3 VOLT
ULTRA HIGH PERFORMANCE
2M X 32 SDRAM 4 BANKS X 512Kbit X 32
200
-5
3
5
5
1
Description
nous high data rate DRAM organized as 4 x
524,288 words by 32 bits. The device is designed to
comply with JEDEC standards set for synchronous
DRAM products, both electrically and mechanically.
Synchronous design allows precise cycle control
with the system clock. The CAS latency, burst
length and burst sequence must be programmed
into device prior to access operation.
The V54C365324V is a 67,108, 864 bits synchro-
-55
183
5.5
5.5
3
166
-6
3
6
6
143
-7
3
7
6
PRELIMINARY
125
-8
3
8
6
clocks
Unit
MHz
ns
ns

Related parts for v54c365324v

v54c365324v Summary of contents

Page 1

... Description The V54C365324V is a 67,108, 864 bits synchro- nous high data rate DRAM organized 524,288 words by 32 bits. The device is designed to comply with JEDEC standards set for synchronous DRAM products, both electrically and mechanically. Synchronous design allows precise cycle control with the system clock ...

Page 2

... SSQ DDQ SSQ DDQ V54C365324V Rev. 1.2 August 2001 PIN CONFIGURATION Pin TSOP (II) 17 (400mil x 875mil) 18 (0.5mm Pin pitch ...

Page 3

... Block Diagram DQMi CLK CKE CS RAS CAS WE DQMi CLK Address V54C365324V Rev. 1.2 August 2001 Write Control MUX Logic Bank0 Bank1 Bank2 512K x 32 512K x 32 512K x 32 Row Decoder Row Address Buffer Column Address Counter ...

Page 4

... VDDQ/VSSQ Data Output Power/Ground NC No Connection V54C365324V Rev. 1.2 August 2001 Input Function System clock input. Active on the positive rising edge to sample all inputs Activates the CLK signal when high and deactivates the CLK when low. CKE low initiates the power down mode, suspend mode, or the self re- ...

Page 5

... Mode Register Set Command must be issued to initialize the Mode Register. A minimum of eight Auto Refresh cycles (CBR) are also required.These may be done before or after programming the Mode Register. Failure to follow these steps may lead to unpredictable start-up modes. V54C365324V Rev. 1.2 August 2001 ...

Page 6

... Full nnn Cn, Cn+1, Cn+2,..... Page V54C365324V Rev. 1.2 August 2001 Similar to the page mode of conventional DRAM’s, burst read or write accesses on any col- umn address are possible once the RAS cycle latches the sense amplifiers. The maximum t the refresh interval time limits the number of random column accesses ...

Page 7

... Down mode longer than the Refresh period (tref) of the device. Exit from this mode is performed by tak- ing CKE “high”. One clock delay is required for mode entry and exit. V54C365324V Rev. 1.2 August 2001 Auto Precharge Two methods are SDRAMs automatic precharge mode, the ...

Page 8

... V ) OUT CC Note: 1. All voltages are referenced may overshoot 2.0 V for pulse width of < 4ns with 3.3V 3.3V. Pulse width measured at 50% points with amplitude measured peak to DC reference. V54C365324V Rev. 1.2 August 2001 +0. 3.3 V 0.3 V CCQ Symbol ...

Page 9

... These parameters depend on the cycle rate and these values are measured by the cycle rate under the minimum value Input signals are changed one time during These parameters are measured with continuous data stream during read access and all DQ toggling. V54C365324V Rev. 1.2 August 2001 = 3.3V 0.3V ...

Page 10

... Power Down Mode Entry Time SB Refresh Cycle 23 t Refresh Period (2048 cycles) REF 24 t Self Refresh Exit Time SREX V54C365324V Rev. 1.2 August 2001 0 Limit Values -5 -55 -6 Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. 5 – 5.5 – ...

Page 11

... Self Refresh Exit is a synchronous operation and begins on the 2nd positive clock edge after CKE returns high. Self Refresh Exit is not complete until a time period equal to tRC is satisfied once the Self Refresh Exit command is registered. V54C365324V Rev. 1.2 August 2001 0 ...

Page 12

... Write Interrupted by a Write 6.2 Write Interrupted by Read 7. Burst Write & Read with Auto-Precharge 7.1 Burst Write with Auto-Precharge 7.2 Burst Read with Auto-Precharge 8. Burst Termination 8.1 Termination of a Full Page Burst Write Operation 8.2 Termination of a Full Page Burst Write Operation V54C365324V Rev. 1.2 August 2001 12 V54C365324V ...

Page 13

... Burst Read Operation (Burst Length = 4, CAS latency = CLK READ A COMMAND NOP CAS latency = 2 t I/O’s CK2, CAS latency = 3 t I/O’s CK3, V54C365324V Rev. 1.2 August 2001 Bank Col. Addr. t RCD Write NOP with Auto Precharge ...

Page 14

... Read to Write Interval (Burst Length = 4, CAS latency = CLK Minimum delay between the Read and Write Commands = 4 cycles DQM COMMAND NOP READ A I/O’s : “H” or “L” V54C365324V Rev. 1.2 August 2001 NOP NOP NOP NOP DOUT A DOUT B DOUT B DOUT B ...

Page 15

... Length = 4, CAS latency = CLK DQM NOP READ A COMMAND CAS latency = 2 t I/O’s CK1, CAS latency = 3 t I/O’s CK2, : “H” or “L” V54C365324V Rev. 1.2 August 2001 DQW t DQZ 1 Clk Interval BANK A NOP READ A WRITE A ACTIVATE Must be Hi-Z before the Write Command ...

Page 16

... Write Interrupted by a Write (Burst Length = 4, CAS latency = CLK COMMAND NOP WRITE A 1 Clk Interval I/O’s DIN A 0 V54C365324V Rev. 1.2 August 2001 NOP NOP NOP NOP don’t care DIN A 1 DIN A 2 DIN A 3 Extra data is ignored after termination of a Burst ...

Page 17

... Burst Write with Auto-Precharge Burst Length = 2, CAS latency = CLK BANK A COMMAND NOP ACTIVE CAS latency = 2 I/O’s CAS latency = 3 I/O’s V54C365324V Rev. 1.2 August 2001 READ B NOP NOP NOP don’t care DOUT B 0 DOUT B 1 don’t care don’ ...

Page 18

... Burst Read with Auto-Precharge Burst Length = 4, CAS latency = CLK COMMAND READ A NOP CAS latency = 2 t I/O’s CK2, CAS latency = 3 t I/O’s CK3, V54C365324V Rev. 1.2 August 2001 NOP NOP NOP NOP DOUT A DOUT A 1 DOUT A 2 DOUT ...

Page 19

... CAS latency = 3 t I/O’s CK3, 8.2 Termination of a Full Page Burst Write Operation (CAS latency = CLK COMMAND NOP WRITE A CAS latency = 2,3 DIN A 0 I/O’s V54C365324V Rev. 1.2 August 2001 Burst NOP NOP NOP Stop DOUT A DOUT A DOUT A DOUT ...

Page 20

... Package Diagram 86 TSOPII–400F #86 #1 0.10 MAX 0.004 0. 0.20 0.024 V54C365324V Rev. 1.2 August 2001 #44 #43 22.62 MAX 0.891 22.22 0.10 0.21 0.05 0.875 0.008 0.004 0.002 0.50 +0.10 0.0197 -0.03 20 V54C365324V Milimeter Unit: Inches Unit : Millimeters 0~8 C 0.25 TYP 0.010 +0.075 0.125 -0.035 +0.003 0.005 -0.001 1.00 1.20 0.10 MAX ...

Page 21

... If such products are to be used in applications in which personal injury might occur from failure, purchaser must do its own quality assurance testing appropriate to such applications. V54C365324V UK & IRELAND SUITE 50, GROVEWOOD BUSINESS CENTRE ...

Related keywords