STN4920S8RG STANSON [Stanson Technology], STN4920S8RG Datasheet - Page 2

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STN4920S8RG

Manufacturer Part Number
STN4920S8RG
Description
Dual N Channel Enhancement Mode MOSFET
Manufacturer
STANSON [Stanson Technology]
Datasheet
ABSOULTE MAXIMUM RATINGS (Ta = 25 ℃ Unless otherwise noted )
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ=150 ℃ )
Pulsed Drain Current
Continuous Source Current
(Diode Conduction)
Power Dissipation
Operation Junction Temperature
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
Parameter
T
T
T
T
A
A
A
A
=25℃
=70 ℃
=25℃
=70 ℃
Dual N Channel Enhancement Mode MOSFET
Symbol
V
V
R
T
I
P
I
T
DSS
GSS
I
STG
θ JA
DM
D
S
D
J
STN4920
-55/150
-55/150
Typical
Copyright © 2007, Stanson Corp.
± 20
7.2
6.0
1.7
2.8
1.8
30
20
65
STN4920 2007. V1
7.2A
Unit
℃ /W
W
V
A
V
A
A

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