RJK60S5DPE RENESAS [Renesas Technology Corp], RJK60S5DPE Datasheet - Page 4

• Manufacturer Part Number: RJK60S5DPE
• Description: 600V - 20A - SJ MOS FET High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

RJK60S5DPE
R07DS0639EJ0100 Rev.1.00
Apr 23, 2012
1000
100
100
10
0.1
10
4
3
2
1
0
1
1
0
0
Drain to Source Voltage
Source to Drain Voltage
Source to Drain Voltage (Typical)
Reverse Drain Current I
C
Ta = 125°C
Body-Drain Diode Reverse
OSS
50
Reverse Drain Current vs.
Recovery Time (Typical)
0.4
Stored Energy (Typical)
100
150
0.8
10
di/dt = 100 A/μs
V
GS
= 0, Ta = 25°C
200
25°C
V
Pulse Test
1.2
GS
DR
V
V
250
= 0
DS
SD
(A)
(V)
(V)
100
300
1.6
100000
10000
1000
100
0.1
800
600
400
200
10
1
6
5
4
3
2
1
0
Dynamic Input Characteristics (Typical)
−25
0
0
0
V
Drain to Source Voltage
V
vs. Case Temperature (Typical)
DS
V
f = 100 kHz
Gate to Source Cutoff Voltage
DS
Case Temperature
GS
0
50
Gate Charge
= 10 V
Drain to Source Voltage
= 0
Typical Capacitance vs.
V
20
25
DD
1 mA
100
= 480 V
300 V
100 V
50
V
I
D
V
GS
150
40
= 10 mA
DD
0.1 mA
75
= 480 V
Qg (nC)
300 V
100 V
200
100 125 150
Coss
Tc (°C)
Ta = 25°C
Crss
Ciss
I
Ta = 25°C
60
D
V
= 20 A
250
DS
(V)
Preliminary
300
80
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