MTP9575Q8 CYSTEKEC [Cystech Electonics Corp.], MTP9575Q8 Datasheet - Page 2

• Manufacturer Part Number: MTP9575Q8
• Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
• Manufacturer: CYSTEKEC [Cystech Electonics Corp.]

Absolute Maximum Ratings
Electrical Characteristics (Tj=25°C, unless otherwise specified)
MTP9575Q8
Static
Dynamic
Source Drain Diode
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current, T
Pulsed Drain Current
Total Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board; 125 °C/W when mounted on minimum copper pad
ΔBV
Linear Derating Factor
*R
Symbol
*t
BV
V
*t
*Qgd
*Qgs
*V
*G
Coss
*Qrr
Ciss
Crss
*Qg
*Trr
I
I
d(OFF)
2.
GS(th)
DSS
DS(ON)
*t
*t
GSS
DSS
d(ON)
Pulse width ≤300μs, Duty Cycle≤2%
DSS
SD
FS
r
f
/ΔTj
Min.
(Note 2)
-1.0
Parameter
-60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
(Note 1)
(Note 1)
CYStech Electronics Corp.
A
=70℃
-0.04
1745
Typ.
146
165
125
12
68
32
18
56
7
5
5
7
-
-
-
-
-
-
-
-
(Note 1)
(Ta=25°C)
(Note 1)
Max.
±100
2790
-3.0
-1.2
120
-25
90
28
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
V/ ℃
Unit
mΩ
μA
nA
nC
nC
pF
ns
ns
V
V
V
S
Symbol
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Tj, Tstg
Rth,j-a
V
I
V
Pd
I
I
DM
DS
D
D
GS
I
I
V
Reference to 25 ℃ , I
V
V
V
V
V
V
V
V
V
V
I
D
D
S
GS
DS
GS
DS
DS
=-4A, V
DS
DS
DD
GS
DS
GS
=-4A, V
=-3A, V
=0, I
=V
=±25V, V
=-60V, V
=-48V, V
=-10V, I
=-25V, V
=-10V, R
=-48V, V
=0V, I
=-30V, I
GS
-55~+150
D
, I
Limits
=-250μA
Test Conditions
GS
GS
GS
0.02
S
±25
-4.0
-3.2
-60
-20
2.5
D
50
=-2A
=-10V
=-4.5V
D
=0, dI/dt=100A/μs
D
=-250μA
G
GS
GS
GS
GS
=-4A
DS
=-1A,
=3.3 Ω , R
CYStek Product Specification
Spec. No. : C404Q8
Issued Date : 2008.02.04
Revised Date :
Page No. : 2/5
=0
=0, Tj=70 ℃
=0, f=1MHz
=-4.5V, I
=0
D
=-1mA
D
D
=30 Ω
=-4A
W / °C
°C/W
Unit
°C
W
V
A
A
A
V