MTP4413Q8 CYSTEKEC [Cystech Electonics Corp.], MTP4413Q8 Datasheet - Page 2

• Manufacturer Part Number: MTP4413Q8
• Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
• Manufacturer: CYSTEKEC [Cystech Electonics Corp.]

Absolute Maximum Ratings
Electrical Characteristics (Tj=25°C, unless otherwise specified)
MTP4413Q8
Static
Dynamic
Source Drain Diode
ΔBV
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @T
Continuous Drain Current @T
Pulsed Drain Current
Total Power Dissipation @ T
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Note : 1.Pulse Width ≤300μs, Duty Cycle≤2%.
*R
Symbol
BV
V
td
td
*V
Coss
*Qrr
*
Crss
*Trr
I
I
I
Ciss
Qgd
Qgs
GS(th)
DS(ON)
Qg
Rg
DSS
(OFF)
GSS
DSS
DSS
GFS
(ON)
tr
tf
DSS
SD
Linear Derating Factor
2.
3.Surface mounted on 1 in² copper pad of FR-4 board; 125°C/W when mounted on minimum copper pad
/ΔTj
Pulse width limited by maximum junction temperature.
Min.
-0.5
-20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
(Note 2)
Parameter
A
-0.01
Typ.
1140
A
A
=25 °C
CYStech Electronics Corp.
250
210
4.3
16
12
40
13
17
28
22
11
=25 °C
=70 °C
4
7
-
-
-
-
-
-
-
-
-
(Note 3)
(Ta=25°C)
(Note 1)
(Note 1)
Max.
±100
1820
-1.5
-1.2
(Note 3)
-25
30
40
65
27
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V/°C
Unit
mΩ
μA
μA
nA
nC
nC
nC
nC
pF
Ω
ns
ns
ns
ns
ns
V
V
V
S
I
I
I
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
V
D
D
D
f=1.0MHz
GS
DS
GS
DS
DS
DS
DS
DS
GS
DS
GS
GS
GS
=-7A, V
=-4A, V
=-2A, V
Symbol
Tj, Tstg
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Rth,j-a
=0, I
=V
=±20V, V
=-20V, V
=-16V, V
=-10V, I
=-25V, V
=-10V, I
=-10V, R
=-16V, I
=-4.5V
=0V, I
=0V, I
V
V
I
Pd
I
I
DM
GS
DS
D
D
GS
D
, I
=-250μA
GS
GS
GS
S
S
D
=-2A
=-7A, dI/dt=100A/μs
D
D
D
=-10V
=-4.5V
=-2.5V
=-250μA
G
GS
GS
GS
=-7A
=-2A,
=-7A,
DS
=3.3 Ω , R
=0
=0, Tj=70°C
=0, f=1MHz
=0
Test Conditions
-55~+150
D
Limits
=-1mA
0.02
±20
-7.8
-6.2
-20
-30
2.5
50
D
=10 Ω
CYStek Product Specification
Spec. No. : C398Q8
Issued Date : 2007.10.12
Revised Date :
Page No. : 2/6
W / °C
°C/W
Unit
°C
W
V
A
A
A
V