MTP162M3 CYSTEKEC [Cystech Electonics Corp.], MTP162M3 Datasheet - Page 2

• Manufacturer Part Number: MTP162M3
• Description: 30V P-CHANNEL Enhancement Mode MOSFET
• Manufacturer: CYSTEKEC [Cystech Electonics Corp.]

Electrical Characteristics (Tj=25°C, unless otherwise noted)
Ordering Information
MTP162M3
Static
Dynamic
Source-Drain Diode
MTP162M3
∆BV
*R
Device
Symbol
*t
BV
V
*t
*Qgd
*Qgs
*V
Coss
*Qrr
Ciss
Crss
*Qg
I
I
G
*trr
d(OFF)
GS(th)
DSS
DS(ON)
d(ON)
*t
*t
GSS
DSS
FS
DSS
SD
r
f
/∆Tj
(Pb-free)
Min.
Package
SOT-89
-0.5
-30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
CYStech Electronics Corp.
Typ.
-0.1
735
100
1.8
3.6
24
19
80
15
21
15
10
9
-
-
-
-
-
-
-
-
7
-
1000 pcs / Tape & Reel
Max.
± 100
1325
-1.2
-1.2
150
-25
60
80
-1
18
-
-
-
-
-
Shipping
-
-
-
-
-
-
-
-
V/°C
Unit
mΩ
nA
μA
μA
nC
nC
pF
ns
ns
V
V
V
S
I
I
I
V
Reference to 25°C, I
V
V
V
V
V
V
V
R
V
V
V
I
D
D
D
S
G
=-3.2A, V
GS
DS
DS
GS
DS
DS
=-3.2A, V
=-3.0A, V
=-2.0A, V
DS
DS
DS
GS
GS
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
=3.3 Ω , R
=0, I
=V
=-5V, I
= ± 12V, V
=-30V, V
=-24V, V
=-25V, V
=-15V, I
=-24V, I
=-4.5V,
=0V, I
Marking
GS
162
D
, I
=-250μA
S
D
D
=-1.2A
GS
GS
GS
GS
=-3V
D
D
=-250μA
D
GS
GS
GS
Test Conditions
=-3.2A, V
=-3.2A,
DS
=4.6 Ω
=-10V
=-4.5V
=-2.5V
=0, dI/dt=100A/μs
=0
=0 (Tj=70
=0, f=1MHz
=0
Spec. No. : C420M3
Issued Date : 2007.10.08
Revised Date :
Page No. : 2/7
D
CYStek Product Specification
=-1mA
GS
°C)
=-10V