RFD3N08LSM INTERSIL [Intersil Corporation], RFD3N08LSM Datasheet - Page 3

• Manufacturer Part Number: RFD3N08LSM
• Description: 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs
• Manufacturer: INTERSIL [Intersil Corporation]

Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
0.1
20
10
1.2
1.0
0.8
0.6
0.4
0.2
1
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
0
1
0 0
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
0.01
0.1
1
10
-5
TEMPERATURE
0.5
0.2
0.1
0.05
0.02
0.01
25
V
DS
SINGLE PULSE
DS(ON)
, DRAIN TO SOURCE VOLTAGE (V)
T
C
50
, CASE TEMPERATURE (
6-28
10
75
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
V
T
T
DSS
C
-4
J
= 25
= MAX RATED
MAX = 80V
100
o
C
Unless Otherwise Specified
125
o
C)
RFD3N08L, RFD3N08LSM
10
-3
100
150
100ms
DC
1ms
10ms
100 s
t, RECTANGULAR PULSE DURATION (s)
175
200
10
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
30
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1
10
0
25
-5
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
FIGURE 5. PEAK CURRENT CAPABILITY
GS
TEMPERATURE
= 10V
10
50
10
-4
-1
T
V
C
GS
, CASE TEMPERATURE (
10
= 5V
NOTES:
DUTY FACTOR: D = t
PEAK T
75
t, PULSE WIDTH (s)
-3
J
= P
10
100
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
-2
I = I
DM
10
0
25
P
x Z
DM
10
125
JC
1
o
/t
C DERATE PEAK
-1
o
175 - T
T
2
x R
C)
t
t
C
1
2
150
= 25
JC
C
150
o
+ T
10
C
0
C
10
1
175
10
1