apm4532k Anpec Electronics Corporation, apm4532k Datasheet - Page 3

• Manufacturer Part Number: apm4532k
• Description: Dual Enhancement Mode Mosfet N-and P-channel
• Manufacturer: Anpec Electronics Corporation

Notes:
Diode Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Symbol
t
t
V
d(OFF)
C
C
C
d(ON)
R
Q
Q
T
T
Q
SD
oss
iss
rss
G
r
f
gs
gd
g
a
a : Pulse test ; pulse width 300 s, duty cycle 2%.
b : Guaranteed by design, not subject to production testing.
Diode Forward Voltage
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Parameter
b
b
I
I
V
N-Channel
V
V
Frequency=1.0MHz
P-Channel
V
V
N-Channel
V
I
R
P-Channel
V
I
R
N-Channel
V
I
P-Channel
V
I
SD
SD
DS
DS
DS
DS
GS
GS
DS
GS
DS
DD
DD
DS
DS
G
G
=1.7A, V
=-1.7A, V
=1A, V
=-1A, V
=5A
=-3.5A
=6
=6
=0V,V
=0V,
=25V,
=0V,
=-25V,
=15V, R
=-15V, R
=15V, V
=-15V, V
GEN
Test Condition
DS
GEN
GS
GS
=0V,F=1MHz
L
GS
GS
=15 ,
=10V,
L
=15 ,
=-10V,
=0V
=10V,
=0V
=-10V,
(T
A
= 25 C unless otherwise noted)
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
P-Ch
P-Ch
P-Ch
N-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
Min.
APM4532K
12.6
-0.7
440
530
0.7
4.7
1.1
13
90
90
40
40
10
20
15
Typ. Max.
3
8
8
7
5
7
8
2
1
-1.3
1.3
15
15
20
20
28
28
15
18
17
12
Unit
nC
pF
ns
V