ZVP4525TA ZETEX [Zetex Semiconductors], ZVP4525TA Datasheet

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ZVP4525TA

Manufacturer Part Number
ZVP4525TA
Description
P-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturer
ZETEX [Zetex Semiconductors]
Datasheet
ISSUE 1 - MARCH 2001
250V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
DESCRIPTION
This 250V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.
SOT89 and SOT223 versions are also available.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
DEVICE
ZVP4525TA
ZVP4525TC
(
High voltage
Low on-resistance
Fast switching speed
Low gate drive
Low threshold
Complementary N-channel Type ZVN4525E6
SOT23-6 package
Earth Recall and dialling switches
Electronic hook switches
High Voltage Power MOSFET Drivers
Telecom call routers
Solid state relays
P52
REEL SIZE
(inches)
13
7
TAPE WIDTH (mm)
8mm embossed
8mm embossed
1
QUANTITY
PER REEL
3000 units
10000 units
ZVP4525E6
Top View
SOT23-6

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ZVP4525TA Summary of contents

Page 1

... APPLICATIONS Earth Recall and dialling switches Electronic hook switches High Voltage Power MOSFET Drivers Telecom call routers Solid state relays ORDERING INFORMATION DEVICE REEL SIZE (inches) ZVP4525TA 7 ZVP4525TC 13 DEVICE MARKING P52 ISSUE 1 - MARCH 2001 TAPE WIDTH (mm) QUANTITY PER REEL 8mm embossed ...

Page 2

ZVP4525E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V =10V; TA=25°C)( =10V; TA=70°C)(a) GS Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at T =25°C ...

Page 3

ISSUE 1 - MARCH 2001 CHARACTERISTICS 3 ZVP4525E6 ...

Page 4

ZVP4525E6 ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On ...

Page 5

TYPICAL CHARACTERISTICS ISSUE 1 - MARCH 2001 ZVP4525E6 5 ...

Page 6

ZVP4525E6 CHARACTERISTICS 6 ISSUE 1 - MARCH 2001 ...

Page 7

TEST CIRCUITS ISSUE 1 - MARCH 2001 ZVP4525E6 7 ...

Page 8

ZVP4525E6 PACKAGE DIMENSIONS DIM Millimetres Inches Min Max Min A 0.90 1.45 0.35 A1 0.00 0. 0.90 1.30 0.035 b 0.35 0.50 0.014 C 0.09 0.20 0.0035 D 2.80 3.00 ...

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