flm1011-3f Eudyna Devices Inc, flm1011-3f Datasheet

flm1011-3f

Manufacturer Part Number

flm1011-3f

Description

X, Ku-band Internally Matched Fet

Manufacturer

Eudyna Devices Inc

Datasheet

1.FLM1011-3F.pdf (4 pages)

Available stocks

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Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FLM1011-3F

Manufacturer:

Eudyna

Quantity:

5 000

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DESCRIPTION

The FLM1011-3F is a power GaAs FET that is internally matched for

standard communication bands to provide optimum power and gain in a

50 ohm system.

Eudyna’s stringent Quality Assurance Program assures the highest

reliability and consistent performance.

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:

CASE STYLE: IA

Edition 1.4

August 2004

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

FEATURES

• High Output Power: P 1dB = 35.0dBm (Typ.)

• High Gain: G 1dB = 7.5dB (Typ.)

• High PAE: η add = 29% (Typ.)

• Low IM 3 = -46dBc@Po = 24.0dBm

• Broad Band: 10.7 ~ 11.7GHz

• Impedance Matched Zin/Zout = 50Ω

• Hermetically Sealed

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

Saturated Drain Current

Transconductance

Pinch-off Voltage

Gate Source Breakdown Voltage

Output Power at 1dB G.C.P.

Power Gain at 1dB G.C.P.

Drain Current

Power-Added Efficiency

Gain Flatness

3rd Order Intermodulation

Distortion

Thermal Resistance

Channel Temperature Rise

1. The drain-source operating voltage (V DS ) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 13.0 and -1.4 mA respectively with

gate resistance of 100Ω.

Item

Symbol

V GSO

∆T ch

G 1dB

P 1dB

I DSS

η add

Symbol

I dsr

IM 3

R th

g m

∆ G

V p

V DS

V GS

T stg

T ch

P T

10V x I dsr x R th

V DS = 5V, V GS = 0V

V DS = 5V, I DS = 900mA

V DS = 5V, I DS = 70mA

I GS = -70µA

V DS = 10V,

I DS = 0.6 I DSS (Typ.),

f = 10.7 ~ 11.7 GHz,

Z S = Z L = 50Ω

Channel to Case

f = 11.7GHz, ∆f = 10MHz

2-Tone Test

Pout = 24.0dBm S.C.L.

Test Conditions

Condition

T c = 25°C

X, Ku-Band Internally Matched FET

G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level

Min.

34.0

-0.5

-5.0

6.5

-44

-65 to +175

FLM1011-3F

Rating

1400

1300

25.0

Limit

35.0

Typ.

175

-1.5

900

-46

7.5

5.0

-5

2100

1100

Max.

±0.6

-3.0

6.0

°C/W

dBm

Unit

dBc

°C

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flm1011-3f Summary of contents

Page 1

... Broad Band: 10.7 ~ 11.7GHz • Impedance Matched Zin/Zout = 50Ω • Hermetically Sealed DESCRIPTION The FLM1011- power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25° ...

Page 2

... FLM1011-3F X, Ku-Band Internally Matched FET POWER DERATING CURVE 100 150 Case Temperature (°C) OUTPUT POWER vs. FREQUENCY V DS =10V 37 P 1dB 10.7 10.95 11.2 11.45 Frequency (GHz) OUTPUT POWER & vs. INPUT POWER =10V 11.7 GHz 11.71 GHz 2-tone test ...

Page 3

... FLM1011- +90° 0.2 0.1 SCALE FOR | 0° 10.5 GHz 10.7 10.5 GHz 10.9 10.7 10.9 11.1 -90° S22 MAG ANG .500 -144.6 ...

Page 4

... FLM1011-3F X, Ku-Band Internally Matched FET 2-R 1.25±0.15 (0.049) 4 For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ ...

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