mtv20n50e Freescale Semiconductor, Inc, mtv20n50e Datasheet - Page 3

• Manufacturer Part Number: mtv20n50e
• Description: Tm Data Sheet Tmos E-fet.tm Power Field Effect Transistor D3pak For Surface Mount
• Manufacturer: Freescale Semiconductor, Inc

Motorola TMOS Power MOSFET Transistor Device Data
0.6
0.5
0.4
0.3
0.2
0.1
2.4
2.0
1.6
1.2
0.8
0.4
40
32
24
16
8
0
0
– 50
0
0
0
Figure 3. On–Resistance versus Drain Current
T J = 25°C
V GS = 10 V
V GS = 10 V
I D = 10 A
– 25
2
Figure 5. On–Resistance Variation with
Figure 1. On–Region Characteristics
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
4
10
0
T J , JUNCTION TEMPERATURE (°C)
6
I D , DRAIN CURRENT (AMPS)
and Temperature
V GS = 10 V
25
Temperature
8
T J = 100°C
25°C
– 55°C
10
20
50
TYPICAL ELECTRICAL CHARACTERISTICS
12
75
8 V
7 V
14
100
30
16
125
18
6 V
5 V
20
150
40
10000
1000
0.32
0.30
0.28
0.26
0.24
0.22
100
0.2
10
40
32
24
16
1
8
0
0
2.5
0
V DS
Figure 4. On–Resistance versus Drain Current
T J = 25°C
V GS = 0 V
50
w
3
Figure 6. Drain–To–Source Leakage
10 V
Figure 2. Transfer Characteristics
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
100
3.5
10
Current versus Voltage
150
I D , DRAIN CURRENT (AMPS)
and Gate Voltage
4
200
V GS = 10 V
4.5
25°C
250
20
T J = 125°C
15 V
100°C
25°C
5
300
100°C
5.5
T J = –55°C
350
MTV20N50E
30
6
400
6.5
450
3
500
40
7