DS1230AB-100-IND DALLAS [Dallas Semiconductor], DS1230AB-100-IND Datasheet - Page 4

• Manufacturer Part Number: DS1230AB-100-IND
• Description: 256k Nonvolatile SRAM
• Manufacturer: DALLAS [Dallas Semiconductor]

CAPACITANCE
AC ELECTRICAL
CHARACTERISTICS
PARAMETER SYMBOL
Read Cycle
Time
Access Time
Valid
Valid
Output Active
Output High Z
from
Deselection
Output Hold
from Address
Change
Write Cycle
Time
Write Pulse
Width
Address Setup
Time
Write Recovery
Time
Output High Z
from
Output Active
from
Data Setup
Time
Data Hold
Time
PARAMETER
Input Capacitance
Input/Output Capacitance
OE
CE
OE
to Output
to Output
or
WE
WE
CE
to
t
t
t
t
t
t
t
t
t
t
t
t
t
ODW
OEW
t
t
t
ACC
COE
WR1
WR2
t
DH1
DH2
WC
AW
CO
OD
OH
WP
RC
OE
DS
DS1230AB-70
MIN
DS1230Y-70
70
70
55
15
30
10
5
5
0
5
5
0
MAX
70
35
70
25
25
SYMBOL
(t
A
C
C
: See Note 10) (V
4 of 12
I/O
IN
DS1230AB-85
MIN
DS1230Y-85
85
85
65
15
35
10
5
5
0
5
5
0
MIN
MAX
85
45
85
30
30
(V
TYP
DS1230AB-100
MIN
DS1230Y-100
100
100
75
15
40
10
5
5
5
5
0
5
5
0
CC
CC
=5V =5% for DS1230AB)
=5V =10% for DS1230Y)
MAX
MAX
100
100
50
35
35
10
10
UNITS NOTES
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
pF
pF
(t
DS1230Y/AB
A
=25 C)
NOTES
12
13
12
13
5
5
3
5
5
4