DS1217 DALLAS [Dallas Semiconductor], DS1217 Datasheet

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DS1217

Manufacturer Part Number
DS1217
Description
Nonvolatile Read/Write Cartridge
Manufacturer
DALLAS [Dallas Semiconductor]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DS1217A/
Manufacturer:
SILICONIX
Quantity:
132
FEATURES
DESCRIPTION
The DS1217A is a nonvolatile RAM designed for porta-
ble applications requiring a rugged and durable pack-
age. The nonvolatile cartridge is available in densities
ranging from 2K x 8 to 32K x 8 in 8K byte increments. A
card edge connector is required for connection to a host
system. A standard 30-pin connector can be used for di-
rect mount to a printed circuit board. Alternatively, re-
mote mounting can be accomplished with a 28-conduc-
tor ribbon cable terminated with a 28-pin DIP plug. The
User-insertable
Capacity up to 32K x 8
Standard bytewide pinout facilitates connection to
JEDEC 28-pin DIP socket via ribbon cable
Data retention greater than 10 years
Automatic write protection circuitry safeguards
against data loss
Manual switch unconditionally protects data
Compact size and shape
Rugged and durable
Wide operating temperature range of 0 C to 70 C
Nonvolatile Read/Write Cartridge
PIN ASSIGNMENT
remote method can be used to retrofit existing systems
that have JEDEC 28-pin bytewide memory sites.
The DS1217A cartridge has a lifetime energy source to
retain data and circuitry needed to automatically protect
memory contents. Reading and writing the memory lo-
cations is the same as using conventional static RAM. If
the user wants to convert from read/write memory to
read-only memory, a manual switch is provided to un-
conditionally protect memory contents.
Cartridge Enable
Output Enable
Write Enable
Address 13
Address 10
Address 11
Address 8
Address 9
Data I/O 7
Data I/O 6
Data I/O 5
Data I/O 4
Data I/O 3
+5 Volts
Name
Ground
See Mech. Drawings Section
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
Position
B1
B2
B3
B4
B5
B6
B7
B8
B9
B10
B11
B12
B13
B14
B15
A1
B1
DS1217A
No Connect
Address 14
Address 12
Address 7
Address 6
Address 5
Address 4
Address 3
Address 2
Address 1
Address 0
Data I/O 0
Data I/O 1
Data I/O 2
Ground
Name
OFF – ON
3”
030598 1/8
DS1217A

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DS1217 Summary of contents

Page 1

... See Mech. Drawings Section remote method can be used to retrofit existing systems that have JEDEC 28-pin bytewide memory sites. The DS1217A cartridge has a lifetime energy source to retain data and circuitry needed to automatically protect memory contents. Reading and writing the memory lo- cations is the same as using conventional static RAM. If ...

Page 2

... CC inhibited and all accesses are ignored. WRITE MODE The DS1217A is in the write mode whenever both the WE and CE signals are in the active (low) state after ad- dress inputs are stable. The last falling edge to occur of either will determine the start of the write cycle ...

Page 3

... CARTRIDGE NUMBERING Table 1 PART NO. DENSITY DS1217A/16K- DS1217A/64K- DS1217A/128K-25 16K x 8 DS1217A/192K-25 24K x 8 DS1217A/256K-25 32K x 8 *Unused address inputs must be held low ( DS1217A UNUSED ADDRESS INPUTS *Address 11, 12, 13, 14 *Address 13, 14 *Address 14 030598 3/8 ...

Page 4

... DS1217A ABSOLUTE MAXIMUM RATINGS* Voltage on Any Connection Relative to Ground Operating Temperature Storage Temperature * This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability ...

Page 5

... Output Active from WE t OEW Data Setup Time t DS Data Hold Time from =5V CC MIN TYP MAX UNITS NOTES 250 ns 250 ns 125 ns 250 125 250 ns 170 100 100 DS1217A 10 030598 5/8 ...

Page 6

... DS1217A READ CYCLE ( ADDRESSES OUT WRITE CYCLE 1 (2), (6), ( ADDRESSES OUT D IN WRITE CYCLE 2 (2), ( ADDRESSES COE D OUT D IN 030598 6 ...

Page 7

... Under no circumstances are negative undershoots, of any amplitude, allowed when the device is in battery backup mode. t REC DATA RETENTION TIME MIN MAX UNITS 100 125 ms (t MIN MAX UNITS 10 years DS1217A t R NOTES NOTES 9 030598 7/8 ...

Page 8

... low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output buffers remains in a high impedance state during this period. 9. Each DS1217A is marked with a 4-digit date code AABB. AA designates the year of manufacture; BB desig- nates the week of manufacture. The expected t 10 ...

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