en29lv800bt-90tip Eon Silicon Solution Inc., en29lv800bt-90tip Datasheet - Page 41
![no-image](/images/no-image-200.jpg)
en29lv800bt-90tip
Manufacturer Part Number
en29lv800bt-90tip
Description
8 Megabit 1024k X 8-bit / 512k X 16-bit Flash Memory Boot Sector Flash Memory, Cmos 3.0 Volt-only
Manufacturer
Eon Silicon Solution Inc.
Datasheet
1.EN29LV800BT-90TIP.pdf
(41 pages)
- Current page: 41 of 41
- Download datasheet (326Kb)
Revisions List
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Revision No
A
B
C
D
E
F
G
H
Description
1. Update Eon logo
2. Dimension N corrected on page 37.
1. Correct the typo of program/erase Endurance cycle to 100K
2. Remove ,Unlock Bypass, Unlock Bypass Program,and
3. Remove description of Unlock Bypass
1. Add t
2. Change the FBGA package dimension to enhance the BGA
1. Change the FBGA 48 Ball package thickness from 1.31mm
2.1. Package Thickness A : 1.10 mm to 1.31 mm
2.2. Ball size b : 0.3 mm to 0.4 mm
Preliminary draft
Initial Release
at FEATURES page 1
Unlock Bypass Reset, commands from Table 9
substrate and ball strength, the difference is
to 1.30mm in page 38
Make a note on the tables at page 25 to page 30 regarding
to the test condition
Add t
28 to page 29.
RPD
Busy
/ t
parameter in the table on page 25
RB
parameters on the table 9 and table10 at page
Rev. H, Issue Date: 2008/07/07
41
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
EN29LV800B
Date
2004/08/30
2004/11/26
2005/01/06
2005/04/12
2005/10/04
2006/02/21
2006/05/16
2008/07/07
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