edd51321dbh-ts Elpida Memory, Inc., edd51321dbh-ts Datasheet - Page 7

• Manufacturer Part Number: edd51321dbh-ts
• Description: 512m Bits Ddr Mobile Ram
• Manufacturer: Elpida Memory, Inc.

Notes: 1. IDD specifications are tested after the device is properly initialized.
DC Characteristics 2 (TA = 25 C to +85 C, VDD and VDDQ = 1.7V to 1.95V V, VSS and VSSQ = 0V)
Parameter
Input leakage current
Output leakage current
Output high voltage
Output low voltage
Pin Capacitance (TA = +25°C, VDD and VDDQ = 1.7V to 1.95V)
Notes: 1. These parameters are measured on conditions:
Preliminary Data Sheet E1398E31 (Ver. 3.1)
Parameter
Input capacitance
Delta input capacitance
Data input/output capacitance
Delta input/output capacitance
2. Input slew rate is specified by Test Conditions.
3. Definitions for IDD:
2. DOUT circuits are disabled.
L is defined as VIN
H is defined as VIN
STABLE is defined as inputs stable at an H or L level;
SWITCHING is defined as:
Address and command: inputs changing between H and L once per two clock cycles;
Data bus inputs: DQ changing between H and L once per clock cycle; DM and DQS are STABLE.
TA = +25 C.
Symbol
ILI
ILO
VOH
VOL
Cdi1
CI/O
Cdio
Symbol
CI1
CI2
Cdi2
0.1
0.9
min.
–2.0
–1.5
0.9
—
VDDQ;
VDDQ;
Pins
CK, /CK
All other input-only pins
CK, /CK
All other input-only pins
DQ, DM, DQS
DQ, DM, DQS
VDDQ
max.
2.0
1.5
—
0.1
7
VDDQ
f = 100MHz, VOUT = VDDQ/2,
min.
2.0
2.0
—
—
3.5
—
Unit
µA
µA
V
V
typ.
—
—
—
—
—
—
Test condition
0
0
DQ = disable
IOH =
IOL = 0.1 mA
VIN
VOUT
0.1mA
EDD51321DBH-TS
VDDQ
max.
4.5
4.5
0.25
1.0
6.0
1.0
VDDQ,
pF
Unit
pF
pF
pF
pF
pF
VOUT = 0.2V,
Notes
Notes
1
1
1
1
1, 2,
1