ap2305n ETC-unknow, ap2305n Datasheet

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ap2305n

Manufacturer Part Number
ap2305n
Description
P-channel Enhancement Mode
Manufacturer
ETC-unknow
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ap2305n-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ ▼ ▼ ▼ Simple Drive Requirement
▼ ▼ ▼ ▼ Small Package Outline
▼ ▼ ▼ ▼ Surface Mount Device
Data and specifications subject to change without notice
V
V
I
I
I
P
T
T
Rthj-amb
Description
The SOT-23 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Thermal Data
D
D
DM
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
, low on-resistance and cost-effectiveness.
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient
Parameter
Parameter
1,2
3
3
SOT-23
D
G
3
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
-55 to 150
-55 to 150
Rating
BV
R
I
D
G
± 12
1.38
0.01
- 20
-4.2
-3.4
-10
DS(ON)
DSS
Value
90
AP2305N
D
S
65mΩ
- 4.2A
2004280301
-20V
Units
W/℃
℃/W
Unit
W
V
V
A
A
A

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ap2305n Summary of contents

Page 1

... Storage Temperature Range STG T Operating Junction Temperature Range J Thermal Data Symbol Rthj-amb Thermal Resistance Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET D S SOT-23 G Parameter 3 3 1,2 Parameter 3 AP2305N BV -20V DSS R 65mΩ DS(ON 4. Rating Units - 20 ± 12 -4.2 -3.4 -10 1.38 0.01 W/℃ ...

Page 2

... AP2305N Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 1 -4.2A D =-4. -4.5V GS 1.6 o =25 C 1.4 1.2 1 0.8 0.6 - Fig 4. Normalized On-Resistance 1 0.5 0 -50 1.6 Fig 6. Gate Threshold Voltage v.s. AP2305N o -5.0V C -4.0V 65mΩ -3. -2. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

Page 4

... AP2305N -4. -16V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area -10 V Fig 11. Switching Time Circuit 10000 ...

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