sii150n12 Sirectifier Semiconductors, sii150n12 Datasheet - Page 2

• Manufacturer Part Number: sii150n12
• Description: Npt Igbt Modules
• Manufacturer: Sirectifier Semiconductors

Static Characteristics
FWD
Electeical Characteristics
AC Characteristics
Switching Characteristics
Mechanical Data
Symbol
V
V
I
I
CE(sat)
C
t
t
C
M
GE(th)
CES
GES
C
d(on)
d(off)
V
Q
M
g
t
w
t
t
rr
oes
r
f
res
ies
F
s
fs
rr
t
under following conditions:
I
di/dt= 1500A/us, T
V
V
V
I
under following conditions
V
V
R
V
I
I
to heatsink M6
to terminals M5
V
C
F
F
F
GE
GE
GE
GE
CC
GE
Gon
=150A, V
CE
= 150A, V
= 150A, V
=150A; V
=20V
= V
= 0; V
= 20V, V
= 0, V
= 600V, I
= ± 15V
= R
_
CE
Goff
,
, I
I
CE
CE
C
R
GE
C
=150A
= 600V,V
GE
GE
=5.6 , T
CE
= 1200V; T
= 25V, f = 1MHz
C
_
=6mA
= 15V; T
= 0V, T
= 0V, V
= 150A
= 0
j
= 25(125)
j
GE
Conditions
j
R
= 125
j
= 25(125)
= 600V
j
= 25(125)
=0V,di/dt= 1500A/us,T
_
= 25(125)
NPT IGBT Modules
o
C
o
SII150N12
C
o
o
C
_
C; chip level
o
C
j
= 125
o
C
min.
4.5
2.5
62
T
3
C
= 25
2.3(1.8)
2.5(3.1)
o
5(18)
C , unless otherwise specified
200
100
typ.
2(8)
1.6
0.6
600
5.5
11
0.4
70
S
irectifier
3(3.7)
max.
320
400
200
100
800
325
6.5
2.8
2.8
5
5
Units
Nm
Nm
mA
nA
uC
nF
ns
us
V
V
S
V
g
R