k9k1g08b0b Samsung Semiconductor, Inc., k9k1g08b0b Datasheet - Page 2

• Manufacturer Part Number: k9k1g08b0b
• Description: 128m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

128M x 8 Bit Bit NAND Flash Memory
PRODUCT LIST
FEATURES
x Voltage Supply
x Organization
x Fast Write Cycle Time
GENERAL DESCRIPTION
The K9K1G08X0B is a 128M(134,217,728)x8bit NAND Flash Memory with a spare 4.096K(4,194,304)x8bit. Its NAND cell provides
the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typically 200Ps on
the 528-byte page and an erase operation can be performed in typically 2ms on a 16K-byte block. Data in the data register can be
read out at 50ns(1.8V device : 60ns) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as
command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required,
and internal verify and margining of data. Even the write-intensive systems can take advantage of the K9K1G08X0Bcs extended reli-
ability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The
K9K1G08X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
- Data Register
- Memory Cell Array
- Page Program
- Page Size
- Random Access
- Serial Page Access : 50ns(Min.)*
- Program time : 200Ps(Typ.)
- Block Erase Time : 2ms(Typ.)
x Automatic Program and Erase
- 1.8V device(K9K1G08R0B) : 1.65 ~ 1.95V
- 2.7V device(K9K1G08B0B) : 2.5 ~ 2.9V
- 3.3V device(K9K1GXXU0B) : 2.7 ~ 3.6 V
-128M + 4096K)bit x 8 bit
- (512 + 16)bit x 8bit
- (512 + 16)Byte
- Block Erase :
- (16K + 512)Byte
x Page Read Operation
- (512 + 16)Byte
* K9K1G08R0B : 60ns
K9K1G08R0B-G,J
K9K1G08U0B-G,J
K9K1G08B0B-G,J
Part Number
: 15Ps(Max.)
1.65 ~ 1.95V
Vcc Range
2.5 ~ 2.9V
2.7 ~ 3.6V
2
x Command/Address/Data Multiplexed I/O Port
x Hardware Data Protection
x Reliable CMOS Floating-Gate Technology
x Command Register Operation
x Intelligent Copy-Back
x Unique ID for Copyright Protection
x Package
- Program/Erase Lockout During Power Transitions
- Endurance
- Data Retention : 10 Years
- K9K1G08X0B-GCB0/GIB0
63- Ball FBGA
- K9K1G08X0B-JCB0/JIB0
63- Ball FBGA - Pb-free Package
Organization
X8
: 100K Program/Erase Cycles
FLASH MEMORY
PKG Type
FBGA
Advance