BZT52-C3 PANJIT [Pan Jit International Inc.], BZT52-C3 Datasheet - Page 2

• Manufacturer Part Number: BZT52-C3
• Description: SURFACE MOUNT SILICON ZENER DIODES
• Manufacturer: PANJIT [Pan Jit International Inc.]

ELECTRICAL CHARACTERISTICS (T
Part Number: BZT52-C2V4 - BZT52-C39
NOTE:
1. Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.
2.Specials Available Include:
3.Zener Voltage (V
4. Zener Impedance (Z
5.Surge Current (I
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
P
A. Nominal zener voltages between the voltages shown and tighter voltage tolerances.
B. Matched sets.
current (I
wave pulse of 1/120 second duration superimposed on the test current, I
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
a
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
t r
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
N
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
u
ZT
m
2
2
3
3
3
3
4
4
5
5
6
6
7
8
9
1
1
1
1
1
1
1
2
2
2
2
3
3
3
3
or I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
0
1
2
3
5
6
8
0
2
4
7
0
3
6
9
b
4
7
3
6
9
3
7
1
6
2
8
5
2
1
ZK
r e
R
) is superimposed on I
Z
) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine
) Measurement. Guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (T
Z
) Derivation. The zener impedance is derived from the 60 cycle ac voltage, which results when an AC current having an rms value equal to 10% of the dc zener
N
o
4
4
2
2
3
3
3
5
6
6
7
8
5
9
1
1
1
1
1
1
2
2
2
2
3
3
3
3
1
m
3
7 .
3 .
6 .
9 .
3 .
7 .
6 .
2 .
8 .
5 .
2 .
4 .
1 .
1 .
0
2
4
7
0
3
6
9
0
1
2
3
5
6
8
N
.
o
V
m
n i
@
V
l a
M
Z
Z
z I
2
1
1
1
1
1
1
1
2
2
2
2
2
3
3
4
4
5
5
6
7
8
9
i
3
2
3
3
n e
@ I
3
ZT
2 .
1
0
2
. n
0
2
3
5
6
8
5
4
7
5 .
8 .
4 .
7 .
4 .
8 .
2 .
8 .
4 .
7 .
5 .
4 .
1 .
5 =
8
4
7
1
4 .
4 .
4 .
8 .
3 .
8 .
8 .
8 .
8 .
1 .
8
or I
r e
V
m
ZT
ZK
V
A
o
.
a t l
A
M
=25
e g
2
2
2
2
2
1
1
1
1
1
1
1
a
2
3
3
3
4
4
5
6
7
7
8
9
3
3
3
4
5 .
0
1
2
5
1
3
5
8
4
7
9
5
6
. x
6 .
9 .
2 .
5 .
8 .
1 .
4 .
6 .
2 .
9 .
7 .
6 .
2
5
8
1
6 .
2 .
3 .
6 .
9 .
6 .
7 .
6 .
1 .
1 .
1 .
6
O
C unless otherwise noted) V
V
4
4
8
8
9
9
9
9
9
7
6
1
1
1
2
2
2
3
5
5
5
8
8
8
8
9
9
8
7
7
0
0
5
3
5
5
5
5
5
8
0
0
0
5
0
0
5
0
0
0
5
0
0
0
0
0
0
Z
y D
ZT
a n
ZT
@ I
m
, per JEDEC registration; however, actual device capability is as described in Figure 5.
c i
ZT
m
R
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
s e
A
t s i
n a
e c
4
4
6
5
5
5
5
5
5
5
2
1
1
1
1
1
2
2
2
2
2
2
2
3
5
5
5
7
7
9
0
0
0
0
0
0
0
0
8
0
0
1
1
2
2
2
5
5
5
5
0
5
7
7
m I
Z
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
F
ZK
p
=1.2V max, I
d e
@ I
n a
e c
ZK
m
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
A
F
1
7
5
2
=100mA for all types.
1
1
5
5
L
0
5
0
5
5
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
a e
n
0
0
0
M
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
A
0
0
0
I
0
0
0
a k
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
x a
R
0
0
0
0
0
0
0
0
e g
0
@ V
R
v e
C
r e
r u
2
R
0
7
8
e s
1
1
1
1
1
1
2
2
2
2
e r
1
2
V
2
3
5
6
7
9
1
1
1
1
1
1
1
1
1
8 .
5 .
5 .
0
5
7
9
0
1
2
4
5
7
8
5 .
t n
L
) at 30
M
I
ZM
. x a
C
r u
1
1
1
1
m
O
9
8
7
6
5
5
4
4
4
3
3
3
2
2
2
2
1
1
1
1
1
1
@
C, from the diode body.
3
1
0
0
9
9
8
-
e r
Z
9
4
0
2
4
6
7
9
4
6
3
0
8
5
3
0
8
7
6
3
2
0
A
8
4
9
0
n e
t n
T
r e
A
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
P
a
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
c
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
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e
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