HD1 NEC [NEC], HD1 Datasheet - Page 3

• Manufacturer Part Number: HD1
• Description: on-chip resistor NPN silicon epitaxial transistor For mid-speed switching
• Manufacturer: NEC [NEC]

HD1A4M
ELECTRICAL CHARACTERISTICS (Ta = 25° ° ° ° C)
** PW ≤ 350 µ s, duty cycle ≤ 2 %
HD1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25° ° ° ° C)
** PW ≤ 350 µ s, duty cycle ≤ 2 %
HD1F2Q
ELECTRICAL CHARACTERISTICS (Ta = 25° ° ° ° C)
** PW ≤ 350 µ s, duty cycle ≤ 2 %
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
h
h
h
h
h
h
h
h
h
V
V
V
V
V
V
I
FE1
FE2
FE3
I
FE1
FE2
FE3
I
FE1
FE2
FE3
OL
OL
OL
CBO
R
R
CBO
R
R
CBO
R
R
IL
IL
IL
1
2
1
2
1
2
**
**
**
**
**
**
**
**
**
**
**
**
**
**
**
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
CB
CE
CE
CE
IN
CE
CB
CE
CE
CE
IN
CE
CB
CE
CE
CE
IN
CE
= 5.0 V, I
= 5.0 V, I
= 5.0 V, I
= 60 V, I
= 2.0 V, I
= 2.0 V, I
= 2.0 V, I
= 5.0 V, I
= 60 V, I
= 2.0 V, I
= 2.0 V, I
= 2.0 V, I
= 5.0 V, I
= 60 V, I
= 2.0 V, I
= 2.0 V, I
= 2.0 V, I
= 5.0 V, I
Data Sheet D16182EJ2V0DS
E
C
E
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
= 0
= 0
= 0
= 0.1 A
= 0.8 A
= 0.8 A
= 0.1 A
= 0.5 A
= 1.0 A
= 100 µ A
= 0.1 A
= 0.5 A
= 1.0 A
= 100 µ A
= 0.1 A
= 0.5 A
= 1.0 A
= 100 µ A
Conditions
Conditions
Conditions
MIN.
MIN.
MIN.
3.29
1.54
200
300
200
200
300
200
329
100
300
200
154
7
7
TYP.
TYP.
TYP.
470
220
4.7
2.2
10
10
HD1 SERIES
MAX.
MAX.
MAX.
6.11
2.86
100
100
611
100
286
0.2
0.3
0.5
0.3
0.5
0.3
13
13
Unit
Unit
Unit
nA
kΩ
kΩ
nA
kΩ
nA
kΩ
Ω
Ω
V
V
V
V
V
V
−
−
−
−
−
−
−
−
−
3