MRF9085LR3_06 FREESCALE [Freescale Semiconductor, Inc], MRF9085LR3_06 Datasheet - Page 6

• Manufacturer Part Number: MRF9085LR3_06
• Description: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

MRF9085LR3 MRF9085LSR3
4 - 6
19
17
15
13
18
17
16
15
14
13
12
11
9
7
Figure 6. Power Gain, Efficiency versus Output
Figure 4. Power Gain, Efficiency, IMD versus
1
1
IMD
G
h
G
ps
h
ps
P
out
P
V
I
f1 = 880.0 MHz
f2 = 880.1 MHz
out
, OUTPUT POWER (WATTS) CW AVG.
DQ
DD
, OUTPUT POWER (WATTS) PEP
= 700 mA
= 26 Vdc
Output Power
10
Power
10
19
18
17
16
15
14
13
12
11
Figure 3. Class AB Broadband Circuit Performance
860
VSWR
IMD
G
V
I
f = 880 MHz
Single Tone
ps
DQ
h
DD
865
= 700 mA
TYPICAL CHARACTERISTICS
= 26 Vdc
100
100
870
V
P
I
Two−Tone, 100 kHz Tone Spacing
DQ
−20
−40
−60
DD
out
60
40
20
0
= 700 mA
875
= 26 Vdc
= 90 W (PEP)
f, FREQUENCY (MHz)
60
50
40
30
20
10
0
880
19
17
15
13
11
9
7
−10
−20
−30
−40
−50
−60
−70
885
Figure 7. Power Gain, Efficiency, ACPR versus
Figure 5. Intermodulation Distortion Products
890
1
1
1.98 MHz
750 kHz
G
h
V
I
f1 = 800.0 MHz
f2 = 800.1 MHz
ps
DQ
P
DD
895
out
P
= 700 mA
= 26 Vdc
out
, OUTPUT POWER (WATTS) AVG.
versus Output Power
, OUTPUT POWER (WATTS) PEP
900
Output Power
−28
−30
−32
−34
−36
50
45
40
35
10
10
V
I
f = 880 MHz
DQ
Freescale Semiconductor
DD
RF Product Device Data
= 700 mA
2.00
1.75
1.50
1.25
1.00
= 26 Vdc
100
3rd Order
5th Order
7th Order
−20
−40
−60
−80
40
20
0