MRF9060NR1_09 FREESCALE [Freescale Semiconductor, Inc], MRF9060NR1_09 Datasheet - Page 6

• Manufacturer Part Number: MRF9060NR1_09
• Description: RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

MRF9060NR1
6
Figure 8. Power Gain, Efficiency, and IMD versus Output Power
20
18
16
14
12
10
8
Figure 9. MTTF Factor versus Junction Temperature
10
10
1
10
10
11
10
V
I
f1 = 945 MHz
f2 = 945.1 MHz
9
8
DQ
90
DD
= 450 mA
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
= 26 Vdc
100
TYPICAL CHARACTERISTICS
110
P
out
T
120
J
, OUTPUT POWER (WATTS) PEP
, JUNCTION TEMPERATURE (°C)
D
2
IMD
G
for MTTF in a particular application.
130
η
ps
10
140
150
160
170
180
190
100
200
2
60
40
20
0
−20
−40
−60
210
Freescale Semiconductor
RF Device Data