r1rw0416di Renesas Electronics Corporation., r1rw0416di Datasheet - Page 4

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r1rw0416di

Manufacturer Part Number
r1rw0416di
Description
Wide Temperature Range Version 4m High Speed Sram 256-kword ?? 16-bit
Manufacturer
Renesas Electronics Corporation.
Datasheet
R1RW0416DI Series
Operation Table
CS# OE# WE# LB# UB# Mode
H
L
L
L
L
L
L
L
L
L
Note: H: V
Absolute Maximum Ratings
Parameter
Supply voltage relative to V
Voltage on any pin relative to V
Power dissipation
Operating temperature
Storage temperature
Storage temperature under bias
Notes: 1. V
Rev.1.00, Mar.12.2004, page 4 of 12
H
L
L
L
L
2. V
H
H
H
H
H
L
L
L
L
IH
T
T
, L: V
(min) = 2.0 V for pulse width (under shoot)
(max) = V
L
L
H
H
L
L
H
H
IL
, : V
CC
L
H
L
H
L
H
L
H
IH
+ 2.0 V for pulse width (over shoot)
SS
or V
Standby
Output disable
Read
Lower byte read I
Upper byte read I
Write
Lower byte write I
Upper byte write I
SS
IL
Symbol
V
V
P
Topr
Tstg
Tbias
V
I
I
I
I
I
I
CC
T
T
SB
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
, I
current
SB1
6 ns
I/O1 I/O8
High-Z
High-Z
Output
Output
High-Z
High-Z
Input
Input
High-Z
High-Z
6 ns
Value
1.0
0.5 to +4.6
0.5*
40 to +85
55 to +125
40 to +85
1
to V
CC
+ 0.5*
I/O9 I/O16
High-Z
High-Z
Output
High-Z
Output
High-Z
Input
High-Z
Input
High-Z
2
Ref. Cycle
Read cycle
Read cycle
Read cycle
Write cycle
Write cycle
Write cycle
Unit
V
V
W
C
C
C

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