r1rw0408di Renesas Electronics Corporation., r1rw0408di Datasheet - Page 7

• Manufacturer Part Number: r1rw0408di
• Description: Wide Temperature Range Version 4m High Speed Sram 512-kword ?? 8-bit
• Manufacturer: Renesas Electronics Corporation.

R1RW0408DI Series
Write Cycle
Parameter
Write cycle time
Address valid to end of write
Chip select to end of write
Write pulse width
Address setup time
Write recovery time
Data to write time overlap
Data hold from write time
Write disable to output in low-Z
Output disable to output in high-Z
Write enable to output in high-Z
Notes: 1. Transition is measured 200 mV from steady voltage with output load (B). This parameter is
Rev.1.00, Mar.12.2004, page 7 of 10
2. Address should be valid prior to or coincident with CS# transition low.
3. WE# and/or CS# must be high during address transition time.
4. If CS# and OE# are low during this period, I/O pins are in the output state. Then, the data input
5. If the CS# low transition occurs simultaneously with the WE# low transition or after the WE#
6. t
7. t
8. A write occurs during the overlap of a low CS# and a low WE#. A write begins at the latest
9. t
sampled and not 100% tested.
signals of opposite phase to the outputs must not be applied to them.
transition, output remains a high impedance state.
transition among CS# going low and WE# going low. A write ends at the earliest transition
among CS# going high and WE# going high. t
end of write.
AS
WR
CW
is measured from the latest address transition to the later of CS# or WE# going low.
is measured from the earlier of CS# or WE# going high to the first address transition.
is measured from the later of CS# going low to the end of write.
Symbol
t
t
t
t
t
t
t
t
t
t
t
WC
AW
CW
WP
AS
WR
DW
DH
OW
OHZ
WHZ
R1RW0408DI
-2
Min
12
8
8
8
0
0
6
0
3
WP
is measured from the beginning of write to the
Max
6
6
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
9
8
6
7
1
1
1