MRF7S27130HR3_08 FREESCALE [Freescale Semiconductor, Inc], MRF7S27130HR3_08 Datasheet - Page 8

• Manufacturer Part Number: MRF7S27130HR3_08
• Description: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

MRF7S27130HR3 MRF7S27130HSR3
8
0.0001
0.001
0.01
100
0.1
10
1
0
802.16d, 64 QAM
Channel Bandwidth, Input Signal
PAR = 9.5 dB @ 0.01% Probability
on CCDF
Figure 13. OFDM 802.16d Test Signal
2
3
PEAK−TO−AVERAGE (dB)
/
4
, 4 Bursts, 7 MHz
4
10
10
10
10
10
9
8
7
6
5
90
Figure 12. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
6
110
Input Signal
TYPICAL CHARACTERISTICS
130
T
J
DD
, JUNCTION TEMPERATURE (°C)
WiMAX TEST SIGNAL
8
= 28 Vdc, P
150
10
out
170
= 23 W Avg., and η
190
−10
−20
−30
−40
−50
−60
−70
−80
−90
−20
Figure 14. WiMAX Spectrum Mask Specifications
210
D
−15
= 20%.
ACPR in 1 MHz
Integrated BW
230
−10
250
f, FREQUENCY (MHz)
−5
Channel BW
10 MHz
0
Freescale Semiconductor
ACPR in 1 MHz
5
Integrated BW
RF Device Data
10
15
20