MRF7P20040HR3_10 FREESCALE [Freescale Semiconductor, Inc], MRF7P20040HR3_10 Datasheet - Page 10

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MRF7P20040HR3_10

Manufacturer Part Number
MRF7P20040HR3_10
Description
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
10
(1) Maximum output power measurement reflects pulsed 3 dB gain
Z
Z
MRF7P20040HR3 MRF7P20040HSR3
source
load
1805
1880
1930
2025
2110
2200
MHz
compression.
f
Figure 14. Carrier Side Load Pull Performance —
= Test circuit impedance as measured from gate contact to
= Test circuit impedance as measured from drain contact to
Input
Load Pull
Tuner
ground.
ground.
Watts
35
35
35
35
34
35
Max P
Maximum P3dB Tuning
V
out
DD
Z
dBm
45.4
45.5
45.5
45.5
45.3
45.5
source
= 28 Vdc, I
(1)
Device
Under
Test
DQA
2.3 -- j11.3
2.4 -- j13.0
3.5 -- j17.3
3.8 -- j20.6
5.6 -- j25.8
2.2 -- j9.3
Z
= 150 mA
source
Z
load
Output
Load Pull
Tuner
17.1 -- j7.9
14.0 -- j4.2
14.7 -- j5.9
15.5 -- j8.0
15.4 -- j9.3
14.4 -- j9.4
Z
load
(1) Maximum efficiency measurement reflects pulsed 3 dB gain
Z
Z
source
load
1805
1880
1930
2025
2200
MHz
2110
compression.
Figure 15. Carrier Side Load Pull Performance —
f
Input
Load Pull
Tuner
= Test circuit impedance as measured from gate contact to
= Test circuit impedance as measured from drain contact to
ground.
ground.
Max Eff.
Maximum Efficiency Tuning
66.6
70.1
69.8
67.7
67.9
70.3
%
Z
V
source
DD
(1)
= 28 Vdc, I
Device
Under
Test
2.3 -- j11.3
2.4 -- j13.0
3.5 -- j17.3
3.8 -- j20.6
5.6 -- j25.8
2.2 -- j9.3
DQA
Z
source
Z
= 150 mA
Freescale Semiconductor
load
RF Device Data
Output
Load Pull
Tuner
17.6 + j9.5
16.1 + j9.8
14.2 + j8.9
13.8 + j6.2
11.5 + j3.9
9.6 -- j0.6
Z
load

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