MRF6V2010NR1_08 FREESCALE [Freescale Semiconductor, Inc], MRF6V2010NR1_08 Datasheet - Page 6

• Manufacturer Part Number: MRF6V2010NR1_08
• Description: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

MRF6V2010NR1 MRF6V2010NBR1
6
26
24
22
20
18
16
14
12
10
27
26
25
24
23
22
21
20
19
0
0
G
G
ps
ps
Figure 12. Power Gain and Drain Efficiency
Figure 9. Power Gain versus Output Power
@ 220 MHz
V
@ 130 MHz
G
DD
ps
2
= 20 V
@ 450 MHz
2
P
η
P
versus CW Output Power
25 V
out
out
D
4
, OUTPUT POWER (WATTS) CW
@ 450 MHz
, OUTPUT POWER (WATTS) CW
4
30 V
G
ps
η
6
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
D
@ 64 MHz
35 V
@ 130 MHz
6
η
D
8
26
25
24
23
22
21
20
19
18
@ 220 MHz
η
V
I
40 V
DQ
0.1
D
DD
@ 64 MHz
= 30 mA
= 50 Vdc
8
85_C
10
T
C
= −30_C
45 V
TYPICAL CHARACTERISTICS
I
f = 220 MHz
DQ
10
= 30 mA
12
P
25_C
out
50 V
, OUTPUT POWER (WATTS) CW
14
12
80
70
60
50
40
30
20
10
0
1
G
η
ps
D
V
I
f = 220 MHz
DQ
DD
10
10
10
10
= 30 mA
= 50 Vdc
45
40
35
30
25
20
8
7
6
5
90
0
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
−30_C
Figure 10. Power Output versus Power Input
110
10
5
T
130
J
DD
25_C
, JUNCTION TEMPERATURE (°C)
85_C
= 50 Vdc, P
20
25_C
P
150
72
63
54
45
36
27
18
9
0
in
, INPUT POWER (dBm)
10
out
170
= 10 W CW, and η
Freescale Semiconductor
15
190
T
85_C
C
= −30_C
210
V
I
f = 220 MHz
RF Device Data
DQ
DD
D
= 30 mA
= 62%.
20
= 50 Vdc
230
250
25