MRF5S9150HR3_09 FREESCALE [Freescale Semiconductor, Inc], MRF5S9150HR3_09 Datasheet - Page 2

• Manufacturer Part Number: MRF5S9150HR3_09
• Description: RF Power Field Effect Transistor
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

MRF5S9150HR3
2
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
f = 880 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz
Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain-Source On-Voltage
Reverse Transfer Capacitance
Output Capacitance
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally input matched.
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DS
GS
DS
DS
= 68 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
DS
D
D
D
GS
GS
= 600 μAdc)
= 1500 mAdc, Measured in Functional Test)
= 3.15 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(1)
Characteristic
(T
C
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
DQ
Symbol
V
V
V
ACPR
I
I
I
DS(on)
C
C
GS(th)
GS(Q)
G
IRL
DSS
DSS
GSS
η
= 1500 mA, P
oss
rss
ps
D
18.5
26.5
Min
0.1
—
—
—
—
—
—
—
out
2
3
= 33 W Avg. N-CDMA,
- 46.8
91.5
19.7
28.4
Typ
-20
0.2
3.1
—
—
—
3
4
Freescale Semiconductor
Max
21.5
500
- 45
0.3
10
-9
—
—
—
1
4
5
RF Device Data
μAdc
μAdc
nAdc
Unit
Vdc
Vdc
Vdc
dBc
dB
dB
pF
pF
%