k8d6316u Samsung Semiconductor, Inc., k8d6316u Datasheet - Page 15

• Manufacturer Part Number: k8d6316u
• Description: 64m Bit 8m X8/4m X16 Dual Bank Nor Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K8D6x16UTM / K8D6x16UBM
Notes : 1. L=Logic Low=V
Notes :
Table 9. K8D6316U Autoselect Codes, (High Voltage Method)
Manufacturer ID
Device Code K8D6316UT
Device Code K8D6316UB
Block Protection
Verification
Secode
Indicator Bit (DQ7)
(Top Boot Block)
(Bottom Boot Block)
Description
2. Secode Block : Security Code Block.
1. RA : Read Address, PA : Program Address, RD : Read Data, PD : Program Data
Block (2)
2. To terminate the Autoselect Mode, it is necessary to write Reset command to the register.
3. The 4th cycle data of Autoselect mode is output data.
4. The Read / Program operations at non-erasing blocks and the autoselect mode are allowed in the Erase Suspend mode.
5. The Erase Suspend command is applicable only to the Block Erase operation.
6. Command is valid when the device is in read mode or Autoselect mode.
7. DQ8 - DQ15 are don’t care in command sequence, but RD and PD is excluded.
8. A11 - A21 are also don’t care, except for the case of special notice.
DA : Dual Bank Address (A20 - A21), BA : Block Address (A12 - A21), X = Don’t care .
The 3rd and 4th cycle bank addresses of Autoselect mode must be same.
IL
, H=Logic High=V
CE
L
L
L
L
L
OE
L
L
L
L
L
WE
H
H
H
H
H
IH
, DA=Dual Bank Address, BA=Block Address, X=Don’t care.
A21
A12
DA
DA
DA
BA
DA
to
A10
A11
to
X
X
X
X
X
V
V
V
V
V
A9
ID
ID
ID
ID
ID
A8
A7
to
X
X
X
X
X
15
A6
L
L
L
L
L
A5
A2
to
X
X
X
X
X
A1
H
H
L
L
L
A0
H
H
H
L
L
BYTE
=V
22H
22H
DQ8 to DQ15
X
X
X
IH
FLASH MEMORY
BYTE
=V
X
X
X
X
X
IL
00H (Not factory locked)
80H (Factory locked),
00H (Unprotected)
01H (Protected),
Revision 1.5
March 2005
DQ7
DQ0
ECH
E0H
E2H
to