MRF21085LSR3_08 FREESCALE [Freescale Semiconductor, Inc], MRF21085LSR3_08 Datasheet - Page 3

• Manufacturer Part Number: MRF21085LSR3_08
• Description: RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) (continued)
Two - Tone Common - Source Amplifier Power Gain
Two - Tone Drain Efficiency
Two - Tone Intermodulation Distortion
Input Return Loss
P
out
(V
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
(V
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
(V
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
(V
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
(V
, 1 dB Compression Point
DD
DD
DD
DD
DD
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, I
DQ
out
out
out
out
= 1000 mA, f = 2170 MHz)
= 90 W PEP, I
= 90 W PEP, I
= 90 W PEP, I
= 90 W PEP, I
Characteristic
DQ
DQ
DQ
DQ
(T
= 1000 mA,
= 1000 mA,
= 1000 mA,
= 1000 mA,
C
= 25°C unless otherwise noted)
(continued)
Symbol
P1dB
IMD
G
IRL
η
ps
Min
—
—
—
—
—
13.6
Typ
100
- 31
- 12
36
Max
—
—
—
—
—
MRF21085LSR3
Unit
dBc
dB
dB
W
%
3