MRF18060ALR3_08 FREESCALE [Freescale Semiconductor, Inc], MRF18060ALR3_08 Datasheet - Page 2

• Manufacturer Part Number: MRF18060ALR3_08
• Description: RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

MRF18060ALR3
2
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Input Capacitance (Including Input Matching Capacitor in Package)
Output Capacitance
Reverse Transfer Capacitance
Common - Source Amplifier Power Gain @ 60 W
Drain Efficiency @ 60 W
Input Return Loss
1. Part is internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
GS
DS
GS
DS
DS
GS
DS
DS
DS
DD
DD
DD
= 26 Vdc, V
= 10 Vdc, I
= 26 Vdc, I
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 0 Vdc, I
= 5 Vdc, V
= 10 Vdc, I
= 26 Vdc, I
= 26 Vdc, I
= 26 Vdc, P
D
DS
D
D
D
DQ
DQ
= 10 μAdc)
GS
out
= 300 μAdc)
= 500 mAdc)
(1)
= 2 Adc)
= 0 Vdc)
= 500 mA, f = 1805 MHz)
= 500 mA, f = 1805 MHz)
= 0 Vdc)
= 60 W CW, I
Characteristic
DQ
= 500 mA, f = 1805 MHz)
(T
C
= 25°C unless otherwise noted)
GS
GS
GS
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(1)
V
Symbol
V
V
V
(BR)DSS
I
I
C
DS(on)
C
GS(th)
GS(Q)
C
G
IRL
DSS
GSS
oss
η
iss
rss
ps
Min
11.5
2.5
65
—
—
—
—
—
—
43
—
2
0.27
Typ
160
740
3.9
2.7
13
45
—
—
—
—
—
Freescale Semiconductor
Max
- 10
4.5
—
—
—
—
—
—
—
6
1
4
RF Device Data
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Vdc
dB
dB
pF
pF
pF
%