JAN-03 VISHAY [Vishay Siliconix], JAN-03 Datasheet

JAN-03

Manufacturer Part Number

JAN-03

Description

Basic Definitions

Manufacturer

VISHAY [Vishay Siliconix]

Datasheet

1.JAN-03.pdf (5 pages)

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Basic Definitions

Basic Sinterglass Diode Parameters

The major parameters for the selection of the appro-

priate sinterglass diodes are the maximum reverse

voltage (V

and for switching application the reverse recovery

Polarity Conventions

The voltage direction is given

The numerical value of the voltage is positive if the

potential at the arrow tail is higher than at the arrow

head; i.e., the potential difference from the measuring

point (A) to the reference point (B) is positive.

The numerical value of the voltage is negative if the

potential at the arrow head is higher than the tail; i.e.,

the potential difference from the measuring point to

the reference point is negative.

Document Number 84067

Rev. 7, 07-Jan-03

VISHAY

FAV

FSM

• by an arrow which points from the measuring point

• by a two letter subscript, where the first letter is the

RRM

(BR)R

to the reference point

measuring point and the second letter is the refer-

ence point.

Reverse voltage

Repetitive peak reverse voltage, including all repeated reverse transient voltages

Reverse breakdown voltage

Reverse (leakage) current, at a specified reverse voltage V

Forward current

Forward voltage drop, at a specified forward current I

Average forward output current, at a specified current waveform (normally 10ms/50Hz half-sine-

wave, sometimes 8.3ms/60Hz half-sine-wave), a specified reverse voltage and a specified mounting

condition (e.g. lead-length = 10mm or PCB mounted with certain pads and distance)

Peak forward surge current, with a specified current waveform (normally 10ms/50Hz half-sine-wave,

sometimes 8.3ms/60Hz half-sine-wave),

Reverse recovery time, at a specified forward current (normally 0.5A), a specified reverse current

(normally 1.0A) and specified measurement conditions (normally from 0 to 0.25A)

Reverse avalanche energy, non-repetitive

RRM

), the average forward current (I

Figure 1.

=–V

94 9315

=–V

FAV

)

characteristic (t

for example the reverse avalanche energy capability

In the case of alternating voltages, once the voltage

direction is selected it is maintained throughout. The

alternating character of the quantity is given with the

time dependent change in sign of its numerical values

The numerical value of the current is positive if the

charge of the carriers moving in the direction of the

arrow is positive (conventional current direction), or if

the charge of the carriers moving against this direc-

tion is negative. The numerical value of the current is

negative if the charge of the carriers moving in the

direction of the arrow is negative, or if the charge of

the carriers moving against this direction is positive.

The general rules stated above are also valid for alter-

nating quantities. Once the direction is selected, it is

maintained throughout. The alternating character of

the quantity is given with the time-dependent change

in sign of its numerical values.

) and forward surge capability (I

94 9316

and temperature T

), too. Additional parameters may be

Figure 2.

Vishay Semiconductors

FSM

= –I

) etc.

www.vishay.com

Related parts for JAN-03

JAN-03 Summary of contents

Page 1

... The numerical value of the voltage is negative if the potential at the arrow head is higher than the tail; i.e., the potential difference from the measuring point to the reference point is negative. Document Number 84067 Rev. 7, 07-Jan-03 characteristic (t for example the reverse avalanche energy capability ) (E ) and forward surge capability (I ...

Page 2

... Basic letter Upper-case Upper-case Electrical parameters of external circuits and of circuits in which the semiconductor device forms only a part; all inductances and capacitances Subscript(s) Upper-case Upper-case Static (dc) values Figure 4. Document Number 84067 Rev. 7, 07-Jan-03 VISHAY ), the letter fe ), the dif- 21e 7796 ...

Page 3

... A registrated trade mark of TEMIC for a pro- cess of epitaxial deposition on silicon. Applica- tions occur in planer Z-diodes. It has an advantage compared to the normal process, with improved reverse current. P Power P Reverse Power R Document Number 84067 Rev. 7, 07-Jan-03 Vishay Semiconductors P Total power dissipation tot P Power dissipation, general V Pvp Pulse-power dissipation Q ...

Page 4

... DIN, JEDEC or commercial designations. Information on weight complete is also included. Note: If the dimension information does not include any tol- erances, then lead length and mounting hole dimen- sions are minimum values. All other dimensions are maximum. VISHAY Document Number 84067 Rev. 7, 07-Jan-03 ...

Page 5

... VISHAY Additional Information Not for new developments: This heading indicates that the device concerned should not be used in equipment under development. It is, however, avail- able for devices presently in production. Document Number 84067 Rev. 7, 07-Jan-03 Vishay Semiconductors www.vishay.com 5 ...

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