CFS0103-SB_08 MIMIX [Mimix Broadband], CFS0103-SB_08 Datasheet - Page 2
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CFS0103-SB_08
Manufacturer Part Number
CFS0103-SB_08
Description
0.1-10.0 GHz Low Noise, Medium Power
Manufacturer
MIMIX [Mimix Broadband]
Datasheet
1.CFS0103-SB_08.pdf
(8 pages)
May 2008 - Rev 12-May-08
Electrical Characteristics
Ta=25ºC, Typical device RF parameters measured in test system.
0.1-10.0 GHz Low Noise, Medium Power
pHEMT in a Surface Mount Plastic Package
Notes:
1. Guaranteed at wafer probe.
2. Measurements obtained at fixed tuned system.
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage
2. Assumes DC quiescent conditions. RF OFF.
3. Vgs=0V
Absolute Maximum Ratings
Parameters
Saturated Drain Current 1
Pinch-off Voltage 1
No RF, Quiescent Bias Current
Transconductance 1
Gate to Drain Leakage Current
Gate Leakage Current
Noise Figure (optimized in a fixed
tuned system)
Associated Gain 2
Output Third Order Intercept Point
1 dB Gain Compression Point 2
Parameter
Drain-Source Voltage 2
Gate-Source Voltage 2
Gate-Drain Voltage 2
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Rating
+5.5 V
-5.0 V
-5.0 V
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
their obligation to be compliant with U.S. Export Laws.
Test Conditions
Vds=3V, Vgs=0V
Vds=1.5V, Ids=10% of Idss
Vgs=0.35V, Vds=3V
Vds=2.5V. Gm=Idss/Vp
Vgd = 9
Vgd=Vgs= -4V
f=1000MHz
f=2GHz
f=1000MHz
f=2GHz
f=1000MHz
f=2GHz
f=1000MHz
f=2GHz
Parameter
Drain Current 2
Total Pwr Dissipation 560 mW
RF Input Power
1
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=40mA
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=40mA
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=40mA
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=40mA
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=40mA
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=40mA
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=40mA
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=40mA
Rating
Idss 3 A
17 dBm
Parameter
Channel Temperature
Thermal Resistance
Storage Temperature
-0.8
Min
15
30
75
-0.65
0.45
19.7
20.8
21.1
22.4
18
15.5
15.7
18
16
21
21.5
26.5
18
22
26
29
10
11.5
15.5
16
10
11.5
15.5
16
110
Typ
0.3
0.3
0.4
0.4
0.3
0.3
0.4
70
30
10
CFS0103-SB
100
-0.5
Max
150
150
0.9
Rating
+175ºC
-65ºC to +160ºC
170ºC/W
Units
mA
V
mA
mmho
µA
µA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
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