m6mgt331s8akt Renesas Electronics Corporation., m6mgt331s8akt Datasheet - Page 2

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m6mgt331s8akt

Manufacturer Part Number
m6mgt331s8akt
Description
33,554,432-bit 2,097,152 - Word By 16-bit /4,194,304-word By 8-bit Cmos Flash Memory & 8,388,608-bit 524,288-word By 16-bit /1,048,576-word By 8-bi
Manufacturer
Renesas Electronics Corporation.
Datasheet
Preliminary
Notice: This is not a final specification.
Some parametric limits are subject to change.
2
Capacitance
Symbol
COUT
MCP Block Diagram
Note 1): In case of x8 organization, A-1 is added, and only Lower Byte data(DQ0 to DQ7) are assigned to I/O and
Note 2): In the data sheet there are VCCs which mean F-VCC or "S-VCC". In the SRAM part there are UB# and
Note 3): DU(Dont Use) pin must be OPEN ,otherwise be inputted within 0V ~ Vcc.
CIN
1) 2)
A0 to A20
F-CE#
F-WP#
F-RP#
BYTE#
WE#
OE#
S-UB#
S-LB#
S-CE1#
S-CE2
Capacitance
capacitance
Upper Byte data(DQ8 to DQ15) are High-Z.
LB# which mean S-UB# and S-LB#, respectively.
Output
Input
A20-A0, OE#, WE#, F-CE#, F-WP#, F-RP#,
S-CE1#, S-CE2, BYTE#, S-LB#, S-UB#
1) 2)
1)
A0 to A20
A0 to A18
Parameter
8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BIT) CMOS SRAM
DQ15-DQ0
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS
F-Vcc
S-Vcc
32Mbit DINOR(IV)
Flash Memory
SRAM
8Mbit
GND
Vin=Vout=0V
Conditions
Ta=25 C,
f=1MHz,
M6MGB/T331S8AKT
Stacked -  MCP (micro Multi Chip Package)
1)
DQ0 to DQ15
Min.
Limits
Typ.
Rev.0.2.48a_bebz
FLASH MEMORY &
Renesas LSIs
Max.
18
22
Unit
pF
pF

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