GURAE83 CYSTEKEC [Cystech Electonics Corp.], GURAE83 Datasheet - Page 2

• Manufacturer Part Number: GURAE83
• Description: Low Vcesat NPN Epitaxial Planar Transistor
• Manufacturer: CYSTEKEC [Cystech Electonics Corp.]

Characteristics
Characteristic Curves
D44H11FP
BV
*V
*V
2500
2000
1500
1000
Symbol
500
*h
*h
I
Cob
CEO(SUS)
I
140
120
100
EBO
0
CES
80
60
40
20
CE(sat)
BE(sat)
f
0
T
FE
FE
0
0
Grounded Emitter Output Characteristics
Grounded Emitter Output Characteristics
Collector To Emitter Voltage---VCE(V)
Collector To Emitter Voltage---VCE(V)
1
Min.
80
60
40
2
-
-
-
-
-
-
(Ta=25 C)
2
3
CYStech Electronics Corp.
Typ.
130
0.3
1.0
50
-
-
-
-
-
4
4
500uA
400uA
300uA
200uA
100uA
IB=0uA
IB=0mA
5
10mA
8mA
6mA
4mA
2mA
Max.
0.6
1.5
10
50
-
-
-
-
-
6
6
MHz
Unit
µA
µA
pF
V
V
V
-
-
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
700
600
500
400
300
200
100
0
0
0
0
*Pulse Test : Pulse Width 380µs, Duty Cycle 2%
I
V
V
I
I
V
V
V
V
C
C
C
Grounded Emitter Output Characteristics
CE
EB
CE
CE
CE
CB
=30mA, I
=8A, I
=8A, I
Grounded Emitter Output Characteristics
=80V, V
=5V, I
=1V, I
=1V, I
=6V, I
=10V, f=1MHz
Collector To Emitter Voltage---VCE(V)
Collector To Emitter Voltage---VCE(V)
1
1
B
B
=0.4A
=0.8A
C
C
C
C
2
2
=0
=2A
=4A
=500mA, f=20MHz
B
Test Conditions
BE
=0
=0
3
3
CYStek Product Specification
Spec. No. : C606FP
Issued Date : 2005.03.29
Revised Date :
Page No. : 2/4
4
4
2.5mA
2mA
1.5mA
1mA
500uA
IB=0uA
IB=0mA
5
5
25mA
20mA
15mA
10mA
5mA
6
6