k6x0808t1d Samsung Semiconductor, Inc., k6x0808t1d Datasheet - Page 5

• Manufacturer Part Number: k6x0808t1d
• Description: 32kx8 Bit Low Power Cmos Static Ram
• Manufacturer: Samsung Semiconductor, Inc.

AC CHARACTERISTICS
DATA RETENTION CHARACTERISTICS
K6X0808T1D Family
AC OPERATING CONDITIONS
TEST CONDITIONS
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
Read
Write
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage:1.5V
Output load(see right): C
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Select to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
Item
( Test Load and Input/Output Reference)
C
Parameter List
L
=30pF+1TTL
L
=100pF+1TTL
Symbol
(V
t
t
V
I
RDR
SDR
DR
DR
CC
=2.7~3.6V, Industrial product:T
CS
Vcc=3.0V, CS
See data retention waveform
1
Vcc-0.2V
1
Vcc-0.2V
5
Test Condition
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
WHZ
t
t
t
t
OHZ
t
t
t
OLZ
WC
CW
AW
WP
WR
DW
OW
RC
CO
OE
OH
DH
AA
HZ
AS
LZ
A
=-40 to 85 C, Automotive product:T
1. Including scope and jig capacitance
K6X0808T1D-Q
K6X0808T1D-F
C
Min
70
10
10
70
60
60
50
25
L
5
0
0
0
0
0
0
5
-
-
-
1)
70ns
Max
Speed Bins
70
70
35
25
25
25
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
2.0
0
5
-
Min
CMOS SRAM
85
10
15
85
70
70
60
35
5
0
0
0
0
0
0
5
-
-
-
85ns
A
Typ
=-40 to 125 C
-
-
-
-
Max
December 2003
85
85
40
25
25
30
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
3.6
Revision 1.0
10
6
-
-
Units
)
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
ms
V
A
A