2sb956 Panasonic Corporation of North America, 2sb956 Datasheet - Page 2

• Manufacturer Part Number: 2sb956
• Description: Silicon Pnp Epitaxial Planer Type For Low-frequency Power Amplification
• Manufacturer: Panasonic Corporation of North America

Transistor
2
– 0.003
– 0.001
– 0.3
– 0.1
– 0.03
– 0.01
–10
120
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
–3
–1
80
60
40
20
– 0.01
0
0
Collector to base voltage V
–1
0
Ambient temperature Ta ( ˚C )
Ta=–25˚C
20
– 0.03
Collector current I
–3
40
Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.
V
– 0.1
C
BE(sat)
P
60
ob
C
25˚C
– 0.3
— V
— Ta
–10
75˚C
80
— I
100
CB
–1
2
or more, and
C
–30
C
120
I
f=1MHz
Ta=25˚C
E
I
( A )
–3
C
=0
CB
140
/I
B
=10
–100
( V )
160
–10
– 0.003
– 0.001
– 0.8
– 0.6
– 0.4
– 0.2
– 0.3
– 0.1
– 0.03
– 0.01
–1.2
–1.0
600
500
400
300
200
100
10
Collector to emitter voltage V
Collector to emitter voltage V
– 0.01
– 0.1
0
0
3
1
Area of safe operation (ASO)
0
I
I
Ta=75˚C
– 0.03
– 0.3
CP
C
Collector current I
–1
–25˚C
25˚C
– 0.1
I
–2
–1
h
C
FE
— V
– 0.3
— I
–3
–3
t=1s
CE
C
–10
–4
–1
Single pulse
Ta=25˚C
t=10ms
C
I
B
V
=–5.0mA
CE
Ta=25˚C
–30
– 0.5mA
( A )
–3
–4.5mA
–4.0mA
–3.5mA
–3.0mA
–2.5mA
–2.0mA
–1.5mA
–1.0mA
–5
=–2V
CE
CE
–100
–10
–6
( V )
( V )
– 0.003
– 0.001
– 0.3
– 0.1
– 0.03
– 0.01
–10
500
450
400
350
300
250
200
150
100
–3
–1
50
– 0.01
0
10
– 0.03
Collector current I
Emitter current I
30
V
– 0.1
CE(sat)
f
T
— I
– 0.3
100
— I
E
25˚C
–1
C
E
2SB956
300
C
–25˚C
( mA )
Ta=75˚C
V
Ta=25˚C
I
( A )
–3
CB
C
/I
=–6V
B
=20
1000
–10