ina-50311 ETC-unknow, ina-50311 Datasheet - Page 4

• Manufacturer Part Number: ina-50311
• Description: Noise Silicon Mmic Amplifier
• Manufacturer: ETC-unknow

INA-50311 Applications
Information
Introduction
INA-50311 is a silicon RF
integrated circuit amplifier with a
50
INA-50311 uses resistive feedback
to provide flat gain for low noise
or multi-purpose gain block
applications up to 1000 MHz.
Phase Reference Planes
The positions of the reference
planes used to measure
S-Parameters are shown in
Figure 9. As seen in the illustra-
tion, the reference planes are
located at the point where the
package leads contact the test
circuit.
Biasing
The INA-50311 is a voltage biased
device and operates from a single
+5 volt power supply with a
current drain of only 17 mA. All
bias circuitry is fully integrated
into the IC eliminating the need
for external DC components. The
supply voltage for the INA-50311
is fed in through a separate V
pin of the device and does not
require RF isolation from the
input or output signal
connections.
Figure 9. Reference Planes.
input and output. The
TEST CIRCUIT
REFERENCE
PLANES
CC
INPUT
Operating Details
The INA-50311 is very easy to use.
The basic application of the
INA-50311 is shown in Figure 10.
DC blocking capacitors are placed
in series with the RF Input and
RF Output to isolate adjacent
circuits from the internal bias
voltages that are present at these
terminals. The values of the
blocking capacitors are deter-
mined by the lowest operating
frequency. The values for the
blocking capacitors are chosen
such that their reactances are
small relative to 50 . As an
example, use of the INA-50311 for
an application covering the 902 to
928 MHz band would require
blocking capacitors of at least
70 p F.
The V
amplifier must be RF bypassed by
placing a capacitor to ground
directly at the bias pin of the
package. Like the DC blocking
capacitors, the value of the V
bypass capacitor is determined by
the lowest operating frequency
for the amplifier. This value may
typically be the same as that of
the DC blocking capacitors. If
long bias lines are used to con-
nect the amplifier to the V
Figure 10. Basic Amplifier
Application.
RF
CC
C
block
connection to the
C
6-149
bypass
C
block
C
bypass
CC
V
CC
OUTPUT
CC
RF
supply, additional bypass capac-
itors may be needed to prevent
resonances that would otherwise
result in undesirable gain
responses. A well-bypassed V
line is also desirable to prevent
possible oscillations that may
occur due to feedback through
the bias line from other stages in
a cascade.
Adequate grounding is needed to
obtain maximum performance.
The ground pin of the INA-50311
should be connected directly to
RF ground by using plated
through holes (vias) near the
package terminals.
FR-4 or G-10 PCB material is a
good choice for most low cost
wireless applications. Typical
board thickness is 0.025 or 0.031
inches. The width of 50
microstriplines in these PCB
thicknesses is also convenient for
mounting chip components such
as the series DC blocking
capacitors.
Circuit Example
The amplifier example in Figure
11 shows a typical implementa-
tion of the INA-50311. The input
and output connections are
through 50
DC blocking capacitors.
The V
bypassed very close to the lead of
the RFIC. Provision is also made
for an additional bypass capacitor
on the V
the PCB.
CC
CC
supply connection is RF
line near the edge of
microstriplines with
CC