2SJ681_09 TOSHIBA [Toshiba Semiconductor], 2SJ681_09 Datasheet - Page 5

• Manufacturer Part Number: 2SJ681_09
• Description: TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

−100
−0.1
−10
−1
−0.1
I D max (pulsed) *
I D max (continuous)
*: Single nonrepetitive pulse
Curves must be derated
linearly with increase in
temperature.
Tc = 25°C
Drain-source voltage V
Safe operating area
DC operation
0.01
0.1
Tc = 25°C
10
−1
10 μ
1
Duty = 0.5
0.1
0.2
1 ms *
0.01
100 μ
−10
0.02
DS
V DSS max
0.05
(V)
100 μs *
1 m
−100
Pulse width t
Single Pulse
r
th
10 m
5
− t
R
V
DD
G
w
= 25 Ω
w
= −25 V, L = 2.2 mH
−15 V
(s)
50
40
30
20
10
0 V
0
25
100 m
Test circuit
P DM
Channel temperature (initial) Tch (°C)
50
Duty = t/T
R th (ch-c) = 6.25°C/W
t
T
1
75
E
AS
Ε AS
– T
V
DD
=
ch
100
B
Wave form
1
2
VDSS
I
⋅
AR
L
10
⋅
2 I
⋅
125
⎛
⎜
⎜
⎝
B VDSS
V
DS
B VDSS
2009-09-29
150
2SJ681
−
V DD
⎞
⎟
⎟
⎠