ina-02100 ETC-unknow, ina-02100 Datasheet - Page 3

• Manufacturer Part Number: ina-02100
• Description: Noise, Cascadable Silicon Bipolar Mmic Amplifier
• Manufacturer: ETC-unknow

Chip thickness is 140 m/5.5 mil. Bond Pads are
41 m/1.6 mil typical on each side. Note: Ground
Bonding is Critical. Refer to Application Bulletin,
“AB-0007: INA Bonding Configuration”.
INA-02100 Typical Performance, T
(Unless otherwise noted: The values are the achievable performance for the INA-02100 mounted in a 70 mil
stripline package.)
INA-02100 Chip Dimensions
Figure 4. Output Power and 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 0.1 GHz, I
Figure 1. Typical Gain and Noise Figure
vs. Frequency, T
3.0
2.5
2.0
1.0
1.0
35
30
25
20
15
32
31
30
29
GND
–55
2
.01 .02
Gain Flat to DC
(4)
–25
14.8
TEMPERATURE ( C)
375
.05
FREQUENCY (GHz)
NF
G
RF
IN
(1)
+25
p
13 m
0.5 mil
0.1 0.2
A
OUT
RF
(3)
P
= 25 C, I
1 dB
(2)
+85
0.5
d
GND
= 35 mA.
1
1.0
d
+125
2.0
= 35 mA.
14
12
10
8
19.7
500
3.5
3.0
2.5
2.0
1.5
13 m
0.5 mil
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 2. Device Current vs. Voltage.
50
40
30
20
10
15
12
0
9
6
3
0
.02
0
A
T
T
T
MS
MS
MS
= 25 C
= +125 C
= +25 C
= –55 C
.05
2
FREQUENCY (GHz)
I
I
I
0.1
6-92
d
d
d
= 40 mA
= 35 mA
= 30 mA
V
0.2
d
4
(V)
0.5
6
1.0
2.0
8
Figure 6. Noise Figure vs. Frequency.
Figure 3. Power Gain vs. Current.
3.5
3.0
2.5
2.0
1.5
35
30
25
20
15
20
.02
.05
FREQUENCY (GHz)
I
d
30
= 30 to 40 mA
0.1
I
d
(mA)
0.2
40
0.5
0.1 GHz
1.0 GHz
1.5 GHz
0.5 GHz
1.0
2.0
50