2SJ610_09 TOSHIBA [Toshiba Semiconductor], 2SJ610_09 Datasheet - Page 3

• Manufacturer Part Number: 2SJ610_09
• Description: TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

−1.5
−0.5
0.5
0.3
0.1
−2
−1
−4
−3
−2
−1
10
−0.1
0
0
5
3
1
0
0
Common source
Tc = 25°C, pulse test
Common source
V
Pulse test
Common source
V
Pulse test
DS
DS
= −10 V
= −10 V
−1
Drain-source voltage V
Gate-source voltage V
−0.3
−1
Drain current I
25
−2
−0.5
Tc = −55°C
⎪Y
I
I
D
D
fs
– V
– V
−3
−1
⎪ – I
−2
100
25
DS
GS
100
D
D
−4
GS
DS
(A)
Tc = −55°C
−15
−3
−3
(V)
(V)
−10
V GS = −4 V
−5.5
−5
−8
−5
−6
−4.5
−5
−10
−6
−4
3
−10
0.5
0.3
0.1
−4
−3
−2
−1
10
−0.01
−8
−6
−4
−2
5
0
0
3
1
0
0
Common source
Tc = 25°C, pulse test
Common source
Tc = 25°C
V
Pulse test
GS
= 10 V
−0.03
−2
Drain-source voltage V
Gate-source voltage V
−5
Drain current I
−15
−0.1
R
V
−4
DS (ON)
I
DS
D
−0.3
– V
−10
– V
DS
−10
−6
GS
−8
− I
−6
D
D
−1
GS
DS
(A)
I D = −1 A
Common source
Tc = 25°C
Pulse test
−15
−2
(V)
(V)
−5.5
−4.5
V GS = −4 V
−8
−5
−3
2009-07-13
2SJ610
−10
−10
−20