2SJ600-Z NEC [NEC], 2SJ600-Z Datasheet
2SJ600-Z
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2SJ600-Z Summary of contents
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... Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14645EJ1V0DS00 (1st edition) Date Published November 2000 NS CP(K) Printed in Japan MOS FIELD EFFECT TRANSISTOR SWITCHING INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SJ600-Z = – – 25° –60 V DSS V ...
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... F(S- – di/dt = –100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG Duty Cycle 1% Preliminary Data Sheet D14645EJ1V0DS 2SJ600 MIN. TYP. MAX. UNIT – 1.5 2.0 2 1900 pF 350 pF 140 pF ...
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... The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2) TO-252 (MP-3Z) 6.5±0.2 5.0±0 1.1±0.2 2.3 2.3 Preliminary Data Sheet D14645EJ1V0DS 2SJ600 2.3±0.2 0.5±0.1 0.9 0.8 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) 3 ...
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... NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). 2SJ600 Not all The M8E 00. 4 ...