2SJ512_06 TOSHIBA [Toshiba Semiconductor], 2SJ512_06 Datasheet - Page 2

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2SJ512_06

Manufacturer Part Number
2SJ512_06
Description
Silicon P Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
Electrical Characteristics
Source−Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cut−off current
Drain−source breakdown
voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Characteristics
Characteristics
J512
Rise time
Turn−on time
Fall time
Turn−off time
(Note 1)
(Note 1)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
V
(Ta = 25°C)
R
Symbol
Symbol
(BR) DSS
DS (ON)
V
I
C
I
I
|Y
C
C
Q
Q
GSS
DRP
DSS
V
I
t
t
Q
Q
DSF
DR
t
on
off
oss
t
rss
t
iss
rr
gs
gd
th
fs
r
f
g
rr
|
V
V
I
V
V
V
V
V
I
I
I
dI
D
D
DR
DR
GS
DS
DS
GS
DS
DS
DD
DR
= −10 mA, V
= −5 A
= −5 A, V
= −5 A, V
= −250 V, V
= −10 V, I
= −10 V, I
= −10 V, V
≈ −200 V, V
= ±16 V, V
= −10 V, I
/ dt = 100 A / μs
2
GS
GS
(Ta = 25°C)
D
D
D
Test Condition
Test Condition
GS
DS
GS
GS
= −1 mA
= −2.5 A
= −2.5 A
GS
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 0 V
= −10 V,
−250
−1.5
Min
Min
1.8
Typ.
Typ.
800
250
205
1.0
3.7
2.1
80
16
35
70
22
14
9
8
2006-11-16
−100
Max
−3.5
1.25
Max
±10
−20
2.0
−5
2SJ512
Unit
Unit
μA
μA
nC
μC
pF
ns
ns
V
V
S
A
A
V

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