2SJ407_07 TOSHIBA [Toshiba Semiconductor], 2SJ407_07 Datasheet

2SJ407_07

Manufacturer Part Number

2SJ407_07

Description

Chopper Regulator, DC−DC Converter and Motor Drive Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SJ407_07.pdf (6 pages)

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Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Absolute Maximum Ratings

Thermal Characteristics

Low drain−source ON resistance

High forward transfer admittance

Low leakage current : I

Enhancement mode

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalenche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

= −50 V, T

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π−MOSV)

Pulse (Note 1)

= 20 kΩ)

: V

DSS

(Note 1)

(Note 2)

= 25°C (initial), L = 12.6 mH, R

= −1.5~−3.5 V (V

= −100 μA (max) (V

(Ta = 25°C)

Symbol

th (ch−a)

: R

: |Y

th (ch−c)

DGR

GSS

DSS

stg

DS (ON)

2SJ407

| = 4.0 S (typ.)

= −10 V, I

= 0.8 Ω (typ.)

−55~150

Rating

= −200 V)

−200

4.16

62.5

±20

−20

195

150

Max

3.0

−5

= 25 Ω, I

= −1 mA)

°C / W

Unit

°C

= −5 A

Weight: 1.9 g (typ.)

JEDEC

JEITA

TOSHIBA

2-10R1B

SC-67

2006-11-16

―

2SJ407

Unit: mm

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2SJ407_07 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π−MOSV) Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance High forward transfer admittance Low leakage current : I = −100 μA (max) (V DSS Enhancement mode : ...

Page 2

Electrical Characteristics Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate ...

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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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