2SJ352 HITACHI [Hitachi Semiconductor], 2SJ352 Datasheet - Page 3

• Manufacturer Part Number: 2SJ352
• Description: Silicon P-Channel MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

Electrical Characteristics (Ta = 25°C)
Item
Drain to source
breakdown voltage
Gate to source breakdown
voltage
Gate to source cutoff voltage
Drain to source saturation
voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Note:
1. Pulse test
2SJ351
2SJ352
Symbol Min
V
V
V
V
|y
Ciss
Coss
Crss
t
t
on
off
(BR)DSX
(BR)GSS
GS(off)
DS(sat)
fs
|
–180
–0.15
—
0.7
—
—
–200
—
—
—
20
Typ
—
—
—
—
—
1.0
800
1000
18
320
120
Max
—
—
—
–1.45
–12
1.4
—
—
—
—
—
Unit
V
V
V
V
S
pF
pF
pF
ns
ns
Test conditions
I
I
I
I
I
V
f = 1 MHz
V
D
G
D
D
D
GS
DD
= –10 mA, V
= 100 A, V
= –100 mA, V
= –8 A, V
= –3 A, V
= 5 V, V
= –30 V, I
2SJ351, 2SJ352
GD
DS
DS
D
= –10 V*
= 0*
= –10 V,
GS
= –4 A
DS
DS
= 10 V
= 0
= –10 V
1
1
3